IGBT parallel static current sharing circuit

Abstract

The invention provides an IGBT parallel static current sharing circuit which has advantages of static current sharing, accurate and reliable current sharing adjustment, stable switching frequency, long service life, and high suitability for power electronic equipment which requires IGBT parallel connection and is on for a long time period. The IGBT parallel static current sharing circuit comprises a global control circuit, at least two parallel IGBTs, and local feedback control circuits which are arranged in one-to-one correspondence with the IGBTs. The emitter electrode of each IGBT is connected with the input end of a corresponding local feedback control circuit, and the gate electrode is connected with the output end of the corresponding local feedback control circuit. The local feedback control circuits are connected with the global control circuit. The local feedback control circuits are used for adjusting the amplitude of a driving signal transmitted to the corresponding IGBT according to the acquired feedback signals and a reference signal that is transmitted by a global driving time delay control module. The global control circuit is used for computing the reference signal of the local feedback control circuit according to each IGBT current.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to an IGBT parallel static current sharing circuit. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) combines the advantages of power field effect transistor (MOSFET) and power transistor, and has the advantages of high input impedance, low driving power, and good switching characteristics. It is an ideal fully controlled device. It has been widely used in power electronic equipment. However, for high-voltage and high-power power electronic equipment, the current level of a single IGBT cannot meet the requirements of the equipment, which makes it an effective choice to connect multiple IGBTs in parallel as a basic unit. [0003] In the IGBT parallel application, the inconsistency of the parameters of each IGBT may cause the inconsistency of the equivalent resistance of each parallel IGBT branch, which will lead to the unbalanced quiescent current of ...

AI Technical Summary

Problems solved by technology

However, for high-voltage and high-power power electronic equipment, the current level of a single IGBT cannot meet the requirements of the equipment, which makes it an effective choice to connect multiple IGBTs in parallel as a basic unit

[0003] In the parallel application of IGBT, the inconsistency of the parameters of each IGBT may cause the inconsistency of the equivalent resistance of each parallel IGBT branch, which will lead to the unbalanced quiescent current of each parallel switch tube

Some IGBTs work at a high current for a long time, which will generate excessive heat accumulation, which will eventually lead to device damage, and the damage of some switch tubes will further lead to the overall damage of the remaining switch tubes

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