Low-friction nanometer TaC-reinforced carbon-based composite film preparation method
A low-friction, thin-film technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of self-lubricating field research and application, etc., to improve tribological properties, good stability, and preparation simple method effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0030] Example 1: (C-TaC hard film with a TaC content of 92.3 wt.%)
[0031]A graphite plate with a length of 10cm and a width of 5cm is used as the deposition substrate. Before deposition, it is polished, chamfered, cleaned, and dried, and then placed in the constant temperature area of a hot-wall chemical vapor deposition furnace. The furnace is sealed and vacuumed to below 100pa. , heat up to a temperature of 900~1200°C and keep warm. The chemical vapor deposition process adopted is as follows: the deposition temperature is 1100 °C, the deposition pressure is 500-600 Pa, the deposition time is 6 h, and the reaction gas system used is TaCl 5 -C 3 h 6 -Ar, where the flow rate of propylene is 0.1L / min, and the flow rate of carrier gas argon is 0.4L / min -1 , and pass into the hot wall CVD furnace with a constant gas ratio.
[0032] After deposition, the phase composition of the film mainly includes C phase (7.7 wt.%) and TaC phase (92.3 wt.%); the film is uniform and dens...
Embodiment 2
[0034] Example 2: (C-TaC hard film with TaC content of 86.4wt.% and 72.0wt.%)
[0035] Among them, the composition ratio of the first C-TaC composite film is TaC content 28.0wt%, C content 72.0wt%. 6h, the reaction gas system used is TaCl 5 -C 3 h 6 -Ar, wherein the flow rate of propylene is 1.2 L / min, and the flow rate of carrier gas argon is 0.4 L / min; and it is passed into the hot wall CVD furnace with a constant gas ratio.
[0036] The composition ratio of the second C-TaC composite film is TaC content 13.6wt%, C content 86.4wt%, the chemical vapor deposition process used is, the deposition temperature is 1100°C, the deposition pressure is 500-600Pa, and the deposition time is 6h , the reaction gas system used is TaCl 5 -C 3 h 6 -Ar, wherein the flow rate of propylene is 1.2L / min, and the flow rate of carrier gas argon is 0.2 L / min; and it is passed into the hot wall CVD furnace with a constant gas ratio and constant volume.
[0037] After deposition, the phase comp...
Embodiment 3
[0040] Example 3: (Comparison between C-TaC composite film and other films)
PUM
Property | Measurement | Unit |
---|---|---|
density | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
size | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com