Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for in-situ preparation of porous structure zinc oxide nanometer rod array

A technology of zinc oxide nanorods and porous structure, applied in the direction of zinc oxide/zinc hydroxide, nanotechnology, nanotechnology, etc., to achieve the effect of high purity, large specific surface area, and low equipment requirements

Active Publication Date: 2016-08-10
WUHAN UNIV OF TECH
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there have been many studies on zinc oxide nanorod arrays, and more attention has been paid to the research on improving its specific surface area, but there are no related reports on porous structure zinc oxide nanorod arrays.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for in-situ preparation of porous structure zinc oxide nanometer rod array
  • Method for in-situ preparation of porous structure zinc oxide nanometer rod array
  • Method for in-situ preparation of porous structure zinc oxide nanometer rod array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Preparation of zinc oxide precursor solution: Weigh 5.4876g of zinc acetate dihydrate, dissolve it in 50mL of methanol organic solvent and stir for 20 minutes, then weigh 1.9270g of ammonium acetate and add it to the above solution, and stir on a magnetic stirrer for 25 minutes to form A transparent homogeneous sol, from which a zinc oxide precursor solution is prepared.

[0026] (2) Cleaning of the deposition substrate: the FTO conductive glass substrate (SnO doped with fluorine 2 Transparent conductive glass) after cleaning with detergent, put them in absolute ethanol, deionized water, and absolute ethanol in order to ultrasonically clean for 30 minutes.

[0027] (3) Immersion and pulling of the deposition substrate to form a film: dry the cleaned FTO conductive glass substrate and place it on the clamp of the pulling machine, and dip the FTO conductive glass substrate in the In the prepared zinc oxide precursor solution, the immersion time is 1 minute. After th...

Embodiment 2

[0033] (1) Preparation of zinc oxide precursor solution: first mix zinc acetate dihydrate and methanol to form a methanol solution of zinc acetate dihydrate with a concentration of 0.5mol / L, then add ammonium acetate to obtain a zinc oxide precursor solution, ammonium acetate The molar ratio to zinc acetate dihydrate is 1:1.

[0034] (2) Cleaning of the deposition substrate: After the deposition substrate is FTO conductive glass, it is cleaned with detergent, followed by ultrasonic cleaning with absolute ethanol, deionized water, and absolute ethanol for 60 minutes.

[0035] (3) Immersion and pulling of the deposition substrate to form a film: dry the cleaned FTO conductive glass substrate and place it on the clamp of the pulling machine, and dip the FTO conductive glass substrate in the prepared film at a pulling speed of 2 mm / s. In a good zinc oxide precursor solution, the immersion time is 2 minutes. After the first pull is completed, take out the FTO conductive glass subs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for in-situ preparation of a porous structure zinc oxide nanometer rod array. The method comprises preparing a zinc oxide precursor solution from a zinc acetate dihydrate, methanol and ammonium acetate, cleaning a substrate, dipping the substrate in the zinc oxide precursor solution, carrying out multiple drawing film formation, carrying out drying and annealing treatment to obtain a high purity zinc oxide film crystal seed layer, carrying out crystal seed layer growth in a growth solution of a zinc acetate dehydrate, cadmium sulfate, deionized water and ethene diamine multiple times, and carrying out cleaning and annealing treatment to obtain a directionally arranged porous structure zinc oxide nanometer rod array. The porous structure zinc oxide nanometer rod array has a large specific surface area and provides more spaces for molecule adsorption. The method has a low cost and low equipment requirements and is suitable for a large-area substrate.

Description

technical field [0001] The invention relates to the field of preparation of porous nanomaterials, in particular to a method for in-situ preparation of a zinc oxide nanorod array with a porous structure. Background technique [0002] Zinc oxide (ZnO) nanomaterial is a multifunctional material with many properties such as photoelectricity, piezoelectricity, and thermoelectricity. One-dimensional nanomaterials exhibit unique optoelectronic and chemical properties due to their high specific surface area and aspect ratio. In particular, one-dimensional nanorod arrays are conducive to the effective adsorption of atoms and molecules and the rapid transport of carriers due to their large specific surface area. Migration has high application value in sensitized solar cells, electrochemical sensors and nano-ultraviolet lasers. [0003] There are many methods for preparing ZnO nanorod arrays, including hydrothermal method, molecular beam epitaxy, chemical vapor deposition, chemical wa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G9/02C01P2004/16C01P2004/64C01P2006/12C01P2006/80
Inventor 田守勤孙佳楠赵修建熊德华夏冬林朱明蓓蔡祥莹
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products