Organic dual-functional device and preparation method thereof
A dual-function, device technology, applied in the field of organic dual-function devices and their preparation, can solve the problems of low integration, poor performance, single function, etc., and achieve the effects of high integration, simple preparation process, and low efficiency roll-off
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Embodiment 1
[0084] The hole transport layer material of the device is NPB, the organic active layer material is material 1, and the electron transport material is Alq 3 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0085] Glass substrate / ITO / NPB(15nm) / Material 1(15nm) / Alq 3 (20nm) / Mg:Ag(90nm)
[0086] The preparation method is as follows:
[0087] ①Use ethanol solution, acetone solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. Wherein the ITO film on the glass substrate is used as the anode layer of the device, the square resistance of the ITO film is 10Ω / □, and the film thickness is 160nm.
[0088] ②The dried substrate was moved into a vacuum chamber, and the ITO glass was pretreated with low-energy oxygen plasma for 5 minutes under an oxygen pressure environment with an air pressure of 20Pa, and the sputtering power was 20W.
[0089] The treat...
Embodiment 2
[0094] The hole transport layer material of the device is NPB, the organic active layer material is material 2, and the electron transport material is Alq 3 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0095] Glass substrate / ITO / NPB(15nm) / Material 2(15nm) / Alq 3 (20nm) / Mg:Ag(90nm)
[0096] The fabrication process of the device is similar to that of Example 1.
Embodiment 3
[0098] The hole transport layer material of the device is NPB, the organic active layer material is material 3, and the electron transport material is Alq 3 , The cathode layer is made of Mg:Ag alloy. The entire device structure is described as:
[0099] Glass substrate / ITO / NPB(15nm) / Material 3(15nm) / Alq 3 (20nm) / Mg:Ag(90nm)
[0100] The fabrication process of the device is similar to that of Example 1.
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