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Etchant composition and method for producing metal wiring using same

A technology of composition and etchant, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as difficulty in single-layer use, poor adhesion between copper and glass substrates or silicon insulating layers, and achieve saving Manufacturing cost, reduction of process defects, effects of reduction in taper angle variation

Active Publication Date: 2019-11-26
SAMSUNG DISPLAY CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In addition, copper has poor adhesion to glass substrates or silicon insulating layers, making it difficult to use as a single layer

Method used

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  • Etchant composition and method for producing metal wiring using same
  • Etchant composition and method for producing metal wiring using same
  • Etchant composition and method for producing metal wiring using same

Examples

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Embodiment approach

[0051] According to an exemplary embodiment of the present invention, the nitrogen-based cyclic compound may be a 3 nitrogen-based cyclic compound. The 3 nitrogen-based cyclic compound means a compound containing 3 nitrogens (N) in the ring.

[0052] Specifically, cyclic compounds based on three nitrogens may include 1,2,4-triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3- Amino-1,2,4-triazole-5-thiol or a mixture of at least two of them.

[0053] The content of the nitrogen-based cyclic compound may be about 0.1 wt % to 2 wt % based on the total weight of the etchant composition according to the exemplary embodiment of the present invention. According to an exemplary embodiment of the present invention, when the amount of the nitrogen-based cyclic compound is less than 0.1% by weight, the etching rate of copper cannot be controlled, the CD loss increases, and the straightness of the wiring is also deteriorated, which will cause problems in applications. A serio...

Embodiment 5

[0102] Example 5 shows the use of phosphorous acid instead of phosphoric acid and shows a good level of accumulation of etch amount at the same level as the etchant composition including phosphoric acid.

[0103] However, Comparative Example 1 not including the cyclic compound based on three nitrogens and Comparative Example 2 not including phosphoric acid or phosphorous acid did not perform the function of maintaining the etching amount and the taper angle corresponding to copper accumulation. In addition, Comparative Example 3 not including methanesulfonic acid showed that the etching amount and taper angle were not maintained corresponding to copper accumulation and titanium tail was excessively generated, so the etchant composition not including methanesulfonic acid was not appropriate. refer to figure 2 and 4 , Comparative Example 1 shows the problem of maintaining the taper angle or reducing the cut dimension deviation (CD deviation) depending on the accumulation level...

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Abstract

The invention discloses an etchant composition which includes: 10-20 weight % of persulfate; 0.1-10 weight % of phosphoric acid (H3PO4) or phosphorous acid (H3PO3); 0.1-2 weight % of nitrogen-based ring compounds; 0.1-5 weight % of sulfoacid compounds; 0.1-2 weight % of copper corrosion-inhibitive agents; 0.1-2 weight % of fluorine compound; and residual water which together with the other components constitute a total weight of 100 weight %. The invention also discloses a method of manufacturing metal wiring using the etchant composition.

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Applications No. 10-2014-0190803 and No. 10-2015-0173054 filed in the Korean Intellectual Property Office on December 26, 2014 and December 7, 2015, respectively, which The entire contents are incorporated herein by reference. technical field [0003] The present invention relates to an etchant composition and a method of making metal wiring using the same. Background technique [0004] The flat panel display industry needs to manufacture displays with faster response speed while achieving high resolution, large size, large area and 3D display. Specifically, it is necessary to increase the moving speed of electrons in the channel portion having the TFT structure. For this reason, a method of forming a wiring using a low-resistance material and using an oxide semiconductor to increase the movement speed of electrons in a semiconductor layer has been studi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23F1/18H01L21/768
CPCC23F1/18H01L21/76838H01L2221/1068
Inventor 郑钟铉朴弘植文英慜梁熙星金奎佈申贤哲徐源国金在明
Owner SAMSUNG DISPLAY CO LTD
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