Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

On-chip integrated arsenic sulfide microdisk cavity and manufacturing method thereof

A technology for integrating arsenic sulfide microdisk cavity and arsenic sulfide, which is applied in the optical field, can solve the problems of low quality factor of integrated arsenic sulfide microdisk cavity, and achieve the effect of improving quality factor and performance

Active Publication Date: 2018-03-16
NANJING UNIV
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Embodiments of the present invention provide an on-chip integrated arsenic sulfide microdisk cavity and a manufacturing method thereof, so as to solve the problem of low quality factor of the on-chip integrated arsenic sulfide microdisk cavity in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • On-chip integrated arsenic sulfide microdisk cavity and manufacturing method thereof
  • On-chip integrated arsenic sulfide microdisk cavity and manufacturing method thereof
  • On-chip integrated arsenic sulfide microdisk cavity and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.

[0051] figure 1 It is a schematic cross-sectional view of an implementation of an on-chip arsenic sulfide microdisk cavity provided by an embodiment of the present invention. Such as figure 1 As shown, the on-chip integrated arsenic sulfide microdisk cavity provided by the embodiment of the present invention includes: a support structure 101 and a microdisk 102 .

[0052] Wherein, the microdisk 102 is located on the support structure 101 , and the size of the microdisk 102 is larger than that of the support structure 101 . ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

An embodiment of the present invention discloses an on-chip integrated arsenic sulfide microdisk cavity and a method for manufacturing the same. The microdisk cavity includes: a microdisk and a supporting structure stacked from top to bottom; wherein the size of the microdisk is greater than that of the supporting structure. According to the on-chip integrated arsenic sulfide microdisk cavity and the method for manufacturing the same provided in the embodiment of the present invention, the quality factors of the on-chip integrated arsenic sulfide microdisk cavity can be increased.

Description

technical field [0001] The embodiments of the present invention relate to the field of optical technology, in particular to an on-chip integrated arsenic sulfide microdisk cavity and a manufacturing method thereof. Background technique [0002] Whispering gallery mode microdisk cavity is an important micro-nanophotonic device, which has a wide range of applications in low-threshold lasers, cavity optomechanics, and biosensing. Especially in the field of integrated optics, due to the huge potential application value of mid-infrared optics and nonlinear optics, the research on integrated optics based on materials with high nonlinear coefficient of mid-infrared light transmission will be of great help to this direction. [0003] At present, the mainstream of research on mid-infrared light-transmitting materials in integrated optics is chalcogenide glass, among which arsenic sulfide and arsenic selenide are the main ones. The existing techniques for preparing arsenic sulfide mi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81B1/00B81C1/00
CPCB81B1/00B81C1/00523
Inventor 姜校顺陈远赵明霄肖敏
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com