A manufacturing method for an ITO auxiliary thin-type multi-junction gallium arsenide solar cell bottom electrode

A solar cell, gallium arsenide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as warping and affect the assembly of solar arrays, and achieve the effect of reducing weight, reducing coverage, and solving warping problems

Active Publication Date: 2016-06-22
CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST +1
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  • Abstract
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Problems solved by technology

[0004] However, at present, for thinning to a thickness not exceeding 145 μm and an area greater than 30 cm 2 The three-junction gallium arsenide cell or the multi-junction III-V solar cell represented by this, the preparation of the lower electrode is mostly made of a full evaporation process, and the fully covered lower electrode will be warped after the obtained fully covered lower electrode, which affects Assembly of the solar array

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  • A manufacturing method for an ITO auxiliary thin-type multi-junction gallium arsenide solar cell bottom electrode
  • A manufacturing method for an ITO auxiliary thin-type multi-junction gallium arsenide solar cell bottom electrode
  • A manufacturing method for an ITO auxiliary thin-type multi-junction gallium arsenide solar cell bottom electrode

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Embodiment Construction

[0029] In order to better understand the present invention, the present invention will be further described below in conjunction with specific embodiments and accompanying drawings.

[0030] The following combination Figure 1-Figure 3 , taking an ITO-assisted triple-junction gallium arsenide solar cell as an example, the preparation method of its lower electrode is introduced:

[0031] (1) Evaporation lower electrode:

[0032] Put the epitaxial wafer on which the upper electrode has been vapor-deposited into a glue coating machine, apply glue on the side of the vapor-deposited upper electrode, and bake in an oven at 60°C to 110°C for 40s to 60s after the glue is applied.

[0033] (2) Cleaning:

[0034] After baking, the epitaxial wafer is etched in a hydrofluoric acid solution with a concentration of 10% to 20% for 20 to 40 seconds, and then cleaned with deionized water for 2 to 3 times. Then soak in acetone for 3 to 5 minutes to remove the glue on the upper electrode, was...

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Abstract

The invention provides a manufacturing method for an ITO auxiliary thin-type multi-junction gallium arsenide solar cell bottom electrode, and belongs to the technical field of solar cell manufacturing. The manufacturing method of the invention comprises the steps of gluing, cleaning, metal grid line evaporation, IOT film layer evaporation, etc. The method is applicable to a large-size III-V-group solar cell, of which the thickness reaches below 145 [mu]m; metal grid lines and the ITO film layer are combined to be used as the bottom electrode; a bottom electrode metal covering area of the cell is reduced; a problem of warping of the thin-type cell are effectively solved; and the weight of the cell is reduced.

Description

technical field [0001] The invention relates to the technical field of preparation of solar cells, in particular to a method for preparing a lower electrode of an ITO-assisted thin multi-junction gallium arsenide solar cell. Background technique [0002] The triple-junction gallium arsenide solar cell has the characteristics of high conversion efficiency, good radiation resistance and high temperature working efficiency, and is currently the most efficient solar cell used in domestic aerospace engineering. Since the triple-junction gallium arsenide solar cell and the multi-junction III-V solar cell represented by it are composed of multiple P-N junctions in series, the epitaxial structure is complex, so this type of solar cell is thicker. In order to reduce the weight of the battery per unit area and improve the carrying capacity of the satellite, the substrate of this type of battery is thinned without affecting the performance of the battery. [0003] In order to further ...

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022425H01L31/022475H01L31/1884Y02E10/50Y02P70/50
Inventor 王鑫杜永超
Owner CHINA ELECTRONIC TECH GRP CORP NO 18 RES INST
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