Tubular double-layer shunting structure microchannel-based heat exchange system

Abstract

The invention discloses a tubular double-layer shunting structure microchannel-based heat exchange system, which comprises a pressure-stabilizing high-pressure tank, a cold source device, a circulating pump and a tubular double-layer shunting structure microchannel heat sink, wherein the tubular double-layer shunting structure microchannel heat sink comprises an inner layer shunting structure microchannel, an outer layer shunting structure microchannel and an inner and outer layer connecting microchannel; a microchannel fluid inlet is formed in the inner layer shunting structure microchannel; a microchannel fluid outlet is formed in the outer layer shunting structure microchannel; and the inner layer shunting structure microchannel is communicated with the outer layer shunting structure microchannel through the inner and outer layer connecting microchannel. By the double-layer shunting microchannel structure, small-area segmentation of a large-area heat source is achieved; the problems of uniform distribution and collection of the fluid are solved; meanwhile, the temperature uniformity of a heat dissipation device is also ensured when efficient cooling and heat dissipation are achieved by a micro-bubble jet subcooled boiling technology and the cold source device; and the working safety, stability and reliability of high-power tiny components in a cylinder are ensured.

Description

technical field [0001] The invention belongs to the technical field of heat dissipation of electronic devices, and in particular relates to a heat dissipation device suitable for high heat flux density conditions in a cylindrical small space. Background technique [0002] With the rapid improvement of the operating speed and capacity of high-performance supercomputers and the continuous improvement of the performance requirements of missiles, military radars, laser weapons and other equipment on the performance of high-power devices, the integration of modern electronic devices continues to increase rapidly, and its local heat flux has increased. Up to nearly 1000 W / cm 2 , the traditional heat dissipation technology has been unable to meet the heat dissipation requirements. The accumulation of heat in electronic devices will cause the temperature of devices and systems to rise rapidly, seriously affecting the working status of electronic devices and the stability of the sys...

AI Technical Summary

Problems solved by technology

[0002] With the rapid improvement of the operating speed and capacity of high-performance supercomputers and the continuous improvement of the performance requirements of missiles, military radars, laser weapons and other equipment on the performance of high-power devices, the integration of modern electronic devices continues to increase rapidly, and its local heat flux has increased. Up to nearly 1000 W / cm 2 , the traditional heat dissipation technology can no longer meet the heat dissipation requirements

The accumulation of heat in electronic devices will cause the temperature of devices and systems to rise rapidly, seriously affecting the working status of electronic devices and the stability of the system

Moreover, this type of device also puts forward new requirements for temperature uniformity. The uneven temperature of the device will affect the stability and reliability of the device, and may even cause device failure due to thermal stress

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