Reinforcement method for single event latchup resistance of CMOS device
An anti-single particle and device technology, applied in the direction of single semiconductor device testing, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effect of shortening the research and development cycle, strong resistance to neutron irradiation, and little impact on electrical characteristics
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[0036] The neutron pre-irradiation reinforcement scheme proposed by the present invention has a wider scope of application and is not only suitable for military-grade and aerospace-grade CMOS devices, but also for commercial CMOS devices. Many studies at home and abroad have verified the effect of neutron irradiation on the DC current gain of bipolar devices, but there is no method of applying neutron irradiation to device reinforcement in China, and neutron irradiation is only used in monopolar devices abroad. Particle effect research is not actually applied to device reinforcement. The present invention is based on the fact that the application requirements of commercial CMOS devices in small satellites are more and more urgent, and the anti-neutron radiation ability of modern CMOS devices can generally reach 110 15 n / cm 2Above, the present invention provides feasibility guarantee. In addition, the proposal of the present invention is aimed at the hardening treatment of co...
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