Non-volatile ferroelectric memory, its preparation method and read/write operation method

Abstract

The invention belongs to the technical field of ferroelectric storage, and specifically relates to a nonvolatile ferroelectric storage, a preparation method thereof, and a read / write operation method. The ferroelectric memory includes a ferroelectric thin film layer and its surface etched ferroelectric storage unit, and an in-plane read-write electrode layer arranged on the left and right sides of the ferroelectric storage unit; the polarization direction of its electric domain is basically not parallel to the read-write electrode layer normal direction of . When the in-plane structure of the memory cell is changed, multi-bit information storage can be realized. The read operation and write operation can be completed by depositing read and write electrode layers on the left and right sides of the memory cell etched on the surface, or by adding an additional read electrode and another pair of read and write electrodes on the top of the etched ferroelectric memory cell. The ferroelectric memory of the invention has simple structure, simple preparation and low cost, and can realize non-destructive and rapid readout of stored electric domain logic information in a large current mode.

Description

technical field [0001] The invention belongs to the technical field of ferroelectric storage, and in particular relates to a new type of nonvolatile ferroelectric storage, in particular to etching storage units on the surface of ferroelectric thin film materials and manufacturing in-plane left and right electrodes connected to storage units in the gap between ferroelectric units. An in-plane high-density ferroelectric memory capable of reading and writing operations, a preparation method and a read / write operation method of the ferroelectric memory. Background technique [0002] FRAM (Ferroelectric Random Access Memory) uses ferroelectric domains (or "electric domains") to maintain two different polarization orientations as logic information ("0" or "1") under the action of positive and negative electric fields. Non-volatile memory (Non-volatile Memory) to store data, which can also be called "ferroelectric memory". [0003] The storage medium layer of ferroelectric memory ...

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Problems solved by technology

This atomic force tip technology is not compatible with the current semiconductor process, that is, it cannot achieve mass production; in addition, the readout current is usually only on the order of pA-nA, that is, the current is too weak to be read out by the high-speed memory circuit (ns order) identified

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