Method for reducing influence of base reflection through exposure auxiliary graph

Abstract

The invention provides a method for reducing the influence of base reflection through an exposure auxiliary graph. The method comprises the following steps: classifying ion implanted layer layout graphic boundaries according to the distances from a photoresist boundary to a front layer active region layer and a polysilicon layer within a photoresist opened region, classifying the ion implanted layer layout graphic boundaries with the distance smaller than or equal to a distance threshold as a first class, and classifying the ion implanted layer layout graphic boundaries with the distance greater than the distance threshold as a second class; adding an auxiliary graph with a second size to the second class of ion implanted layer layout graphic boundaries, which can expose a graph on a silicon wafer; adding an auxiliary graph with a first size on the first class of ion implanted layer layout graphic boundaries, which cannot expose a graph on the silicon wafer.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, and more specifically, the invention relates to a method for reducing the influence of substrate reflection by using exposure auxiliary patterns. Background technique [0002] With the continuous reduction of technology nodes, the pattern size of the ion implantation layer and the alignment accuracy requirements with the front layer are getting higher and higher. In the photolithography process, the ion implantation layer is affected by the reflection of the complex front layer pattern at the bottom, which will cause the photoresist pattern to deviate in size, or even collapse to cause defects if it is too narrow. Although the use of bottom anti-reflective coating (BARC) can reduce the influence of substrate reflection, it requires an additional etching process to remove BARC, which not only increases the cost, but also greatly increases the difficulty of the process. The size compensa...

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to address the above-mentioned defects in the prior art, provide a method that can use exposure auxiliary patterns to reduce the influence of substrate reflection, and can solve the problem of photoresist pattern size deviation caused by bottom reflected light, or even collapse due to too narrow defect problem

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