SRAM memory cell and circuit for improving read/write stability of SRAM memory cell

Abstract

The invention relates to the technical field of electronic communication, in particular to an SRAM memory cell and a circuit for improving the read / write stability of the SRAM memory cell. The SRAM memory cell comprises a first switch device, a second switch device, a first inverse unit and a second inverse unit, wherein the first switch device is controllably connected with a first bit line to a first memory code; the second switch device is controllably connected with a second bit line to a second memory code; the first inverse unit is connected between the first switch device and the second switch device in series; the first inverse unit is provided with a first input end and a first output end; the first memory code is defined at the first output end; the second inverse unit is connected between the first switch device and the second switch device in series; a second input end of the second inverse unit is connected with the first output end; a second output end of the second inverse unit is connected with the first input end; and the second memory code is defined at the second output end. According to the SRAM memory cell and the circuit, better read / write ability is provided, the reliability of the SRAM memory cell is improved without adding overmuch extra circuits, the complexity of circuit design is reduced and the area is saved.

Description

technical field [0001] The invention relates to the technical field of electronic communication, in particular to an SRAM storage unit and a circuit for improving its reading and writing stability. Background technique [0002] SRAM (Static RAM, static random access memory) memory is a memory with static access function. It can save the data stored in it without refreshing the circuit. It plays an important role in each chip system. For a SRAM storage unit , its stability is crucial. A storage unit with strong writing ability can not only ensure the stability of the unit, but also increase the speed of writing operations, so that the entire memory can work in a higher-speed system, so its performance also determines the performance of the entire chip. . [0003] With the continuous advancement of the advanced technology level, the size of the device is getting smaller and smaller, and the drift deviation of the process parameters is inevitable, especially for the SRAM arra...

AI Technical Summary

Problems solved by technology

This increases the complexity of the circuit to a certain extent, and the additional auxiliary circuit will also increase the area of ​​the entire memory

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