Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A storage system and a reading and writing method using the storage system

A storage system and file system technology, applied in the storage field, can solve the problems of data damage to the entire file system, increase the cost of solid-state hard disks, and MRAM is expensive, and achieve the effect of improving performance, ensuring read operation performance, and ensuring write operation performance.

Active Publication Date: 2018-09-14
SHANGHAI CIYU INFORMATION TECH CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the introduction of the write cache creates a new problem: once a power failure occurs, the content in the DRAM cache that has not been written to the NAND will be lost, causing the system to lose data or even damage the entire file system
But for a long time in the future, MRAM will still be expensive, so using a large amount of MRAM will also significantly increase the cost of solid-state drives

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A storage system and a reading and writing method using the storage system
  • A storage system and a reading and writing method using the storage system
  • A storage system and a reading and writing method using the storage system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0062] Such as Figure 4 As shown, the storage system of an embodiment of the present invention includes a host memory and a solid-state hard disk. The solid-state hard disk includes a main control chip, a NAND chip, and MRAM. Includes write cache.

[0063] The MRAM is connected to the main control chip of the solid-state hard disk through the DDR DRAM interface.

[0064] The logical address and physical address comparison table is stored in the NAND chip, which is read from the NAND to the host memory by the file system when the computer is turned on. Using this scheme, since the entire logical address and physical address comparison table is read into the host memory, random read and write performance will not be sacrificed, but a large amount of memory in the host will be consumed, so this scheme is more suitable for servers.

[0065] The logical address and physical address mapping table is written back to NAND by the file system when the computer is turned off or the ho...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a storage system. The storage system comprises a host internal memory and a solid state hard disk, wherein the solid state hard disk comprises a main control chip, an NAND chip and an MRAM; the host internal memory comprises a read cache and a logic address and physical address comparison list of the solid state hard disk; and the MRAM comprises a write cache. The invention furthermore provides a reading / writing method adopting the storage system. According to the storage system and the reading / writing method adopting the storage system, the MRAM comprises the write cache, so that the write operability can be ensured, the NAND writing frequency is decreased and the service life of the NAND is prolonged; the host internal memory comprises the read cache, so that the read operability can be ensured; the logic address and physical address comparison list and the read cache are put in the host internal memory which is faster in reading / writing, so that the system performance is improved, the MRAM with limited capacity can be more used in the write cache and the performance is further improved under the condition of controlling the cost; and the random read / write performance is not sacrificed and a lot of internal memory in the host is consumed, so that the scheme is more suitable for servers.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a storage system and a reading and writing method using the storage system. Background technique [0002] Currently, the development of NAND flash memory technology has promoted the SSD industry. Such as figure 1 As shown, high-speed serial interfaces such as SATA, PICe and other technologies are used between the SSD and the host. The interior consists of a set of NAND chips for storing data, DDR DRAM (memory) for supporting calculation and caching data, and a main control chip (SSD Controller). Sometimes a power failure protection system is also required. [0003] NAND is a storage device that reads and writes as a whole. The smallest readable unit is called a page, and the smallest erasable unit is called a block. A block is often composed of many pages. After the block is erased, the pages inside can be written separately Enter operation. Write operations are slow, much ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F12/06
Inventor 戴瑾
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products