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A high-speed single crystal growth device and method

A growth method, single crystal technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., to achieve the effects of increasing the pulling speed, increasing the axial temperature gradient, and reducing costs

Active Publication Date: 2018-10-30
徐州晶睿半导体装备科技有限公司
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to provide a high-speed single crystal growth device and method, so as to realize rapid crystal growth and solve the problem of releasing a large amount of latent heat of crystallization that is difficult to quickly remove under the condition of high pulling speed of the crystal by traditional air-cooling and water-cooling methods

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  • A high-speed single crystal growth device and method
  • A high-speed single crystal growth device and method
  • A high-speed single crystal growth device and method

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Embodiment Construction

[0037] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0038] Such as figure 1 and figure 2 As shown, the high-speed single crystal growth device of the present invention includes a reaction cylinder 1, a CCD image sensor window 2, a crystal 3, an insulation cylinder 4, a furnace wall 5, a heat shield 6, a quartz crucible 7, a support body 8, a melt 9, graphite Crucible 10 and graphite heater 11. The support body 8 is used to support the graphite crucible and rotates. The outer side of the quartz crucible 7 and the graphite crucible 10 is a graphite heater 11, and the outer side of the graphite heater 11 is an insulating cylinder 4 for preventing heat loss; a heat shield 6 for diversion and heat preservation is arranged above the solution. The crystallization radius change of the crystal during the crystal growth process is monitored through the CCD image sensor window 2, and then the crystal pulling speed an...

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Abstract

The invention discloses a high-speed single crystal growth device and method and mainly relates to a crystal cooling manner and a reaction cylinder for conveying reactants to perform chemical reactions. The reaction cylinder is made of high-temperature-resistant materials and comprises a gas inlet cylinder and a gas discharge cylinder. The gas inlet cylinder is provided with a passage for feeding the reactants and protecting gas. The reactants are sprayed to the surfaces of growing high-temperature crystals after passing the gas inlet cylinder to perform chemical reaction so as to absorb heat and fast remove the heat on the surfaces of the crystals. The gas discharge cylinder is used for discharging the reactants not completely reacted and reaction product gas out of a furnace. The gas inlet cylinder and the gas discharge cylinder are integrally connected and fixed on a furnace wall. The high-speed single crystal growth device and method has the advantages that the chemical heat-absorption reaction is applied to the intensified cooling in crystal growth for the first time, the heat on the surfaces of the crystals can be removed fast, the axial temperature gradient inside the crystals can be increased evidently, and accordingly the crystal growth speed is increased.

Description

Technical field: [0001] The invention belongs to the field of Czochralski method crystal growth technology and devices, in particular to a high-speed single crystal growth device and method. Background technique: [0002] The Czochralski crystal growth method was invented by Polish scientist Jan Czochralski in 1918. The method is to use the rotating seed crystal to continuously pull the crystal from the melt in the crucible rotating in the opposite direction. It consists of melting material, seeding, shouldering, equal diameter, finishing and other processes. First, put high-purity raw materials and doping substances into the crucible, and the heater will work to melt the raw materials; when the temperature of the melt is stable, immerse the seed crystal in the melt to start seeding; after the seeding is completed, reduce the pulling speed and temperature, so that the diameter of the crystal gradually increases to the target diameter. This process is called shouldering; aft...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B15/00
CPCC30B15/00C30B29/06
Inventor 刘立军丁俊岭赵文翰
Owner 徐州晶睿半导体装备科技有限公司
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