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Algan solar-blind ultraviolet enhanced avalanche photodetector and preparation method thereof

An avalanche photoelectric and enhanced technology, which is applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of not steep enough cut-off absorption edge and low pass rate, and achieve the goals of reduced collision ionization, high avalanche gain, and high crystal quality Effect

Active Publication Date: 2017-02-08
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In 2013, we used the i-type AlzGa1-zN multiplication layer with low Al composition as the main ionization region of holes, and the i-type AlyGa1-yN multiplication layer with high Al composition as the initial hole acceleration region, and designed a multiplication Enhanced AlGaN solar-blind avalanche photodiode with heterogeneous structure and its preparation method [see patent, high-gain AlGaN ultraviolet avalanche photodetector and its preparation method, application number: CN201310367175.1], the detector has a cut-off wavelength of There is high responsivity nearby, but its cut-off absorption edge is not steep enough
Many new optical devices adopt this characteristic of photonic crystals, and photonic crystal filters are one of the research hotspots, but photonic crystal filters have the problem of low pass rate

Method used

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  • Algan solar-blind ultraviolet enhanced avalanche photodetector and preparation method thereof
  • Algan solar-blind ultraviolet enhanced avalanche photodetector and preparation method thereof
  • Algan solar-blind ultraviolet enhanced avalanche photodetector and preparation method thereof

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Embodiment 1

[0033] A method for preparing an AlGaN sun-blind ultraviolet-enhanced avalanche photodetector with a one-dimensional photonic crystal layer and an anti-reflection coating, the steps comprising:

[0034] (1) AlN / sapphire template layer in NH 3 Surface nitriding under atmosphere;

[0035] (2) A one-dimensional photonic crystal layer is grown on the sapphire surface of the AlN / sapphire template layer, followed by a 1-period anti-reflection coating [b*(L / 2 H L / 2)], an m-period periodic layer [(L / 2 H L / 2)], n-period anti-reflection coating [a*(L / 2 HL / 2)];

[0036] (3) A layer of i-type Al is grown on the AlN surface of the AlN / sapphire template layer x Ga 1-x N layer;

[0037] (4) in Al x Ga 1-x A layer of n-type Al is grown on the N layer x Ga 1-x N layer;

[0038] (5) In n-type Al x Ga 1-x A layer of i-type Al is grown on the N layer y1 Ga 1-y1 N layer;

[0039] (6) In i-type Al y1 Ga 1-y1 A layer of n-type Al is grown on the N layer y Ga 1-y N component gradie...

Embodiment 2

[0058] The steps of this embodiment are basically the same as those of Embodiment 1, the difference being that n=2. The ultraviolet reflection spectrum of the one-dimensional photonic crystal layer obtained in the present embodiment 2 is shown in image 3 . With a 2-cycle anti-reflection coating, the UV reflectance around 275nm is lower than 20%, and the UV transmittance in the range of 260-280nm is above 97%, indicating that the 2-cycle anti-reflection coating enhances the UV light in the range of 260-280nm As for the transmittance, it can be seen that the ultraviolet reflection effect of the one-dimensional photonic crystal layer in Example 2 in the range of 260-280 nm is lower than that of Example 1, but higher than that of Example 3 and Comparative Example 2.

Embodiment 3

[0060] The steps of this embodiment are basically the same as those of Embodiment 1, the difference being that n=1. The ultraviolet reflection spectrum of the one-dimensional photonic crystal layer obtained in the present embodiment 3 is shown in image 3 . With 1-cycle anti-reflection coating, the UV light reflectance around 275nm is lower than 22%, and the UV light transmittance in the range of 260-280nm is above 95%, indicating that the 2-cycle anti-reflection coating enhances the UV light in the range of 260-280nm Transmittance, it can be seen that the ultraviolet reflection effect of the one-dimensional photonic crystal layer in Example 3 in the range of 260-280 nm is lower than that of Example 2, but higher than that of Comparative Example 2.

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Abstract

The invention discloses an AlGaN solar-blind ultraviolet enhanced avalanche photo-detector which has a structure including a one-dimensional photonic crystal layer, an AlN / sapphire template layer, an i type AlxGa(1-x)N layer, an n type AlxGa(1-x)N layer, an i type Aly1Ga(1-y1)N layer, an n type AlyGa(1-y)N component gradual-change layer, an i type Aly2Ga(1-y2)N layer, and a p type GaN layer in order from bottom to top, an n type Ohmic electrode being guided out from the n type AlxGa(1-x)N layer, and a p type Ohmic electrode being guided out from the p type GaN layer, wherein 0.5<=x<=1, 0.4<=y1<1, 0.1<=y2<0.5, y2<y1<x, the component y gradually decreases in the direction from bottom to top, and y2<=y<=y1. The invention also discloses a preparation method for the AlGaN solar-blind ultraviolet enhanced avalanche photo-detector. In the AlGaN solar-blind ultraviolet enhanced avalanche photo-detector with an SAM structure, the one-dimensional photonic crystal layer has a periodic antireflective coating which can reduce the light reflection of a solar-blind area of the solar-blind ultraviolet enhanced avalanche photo-detector and improve the detector performance.

Description

technical field [0001] The patent of the invention relates to the field of optoelectronic devices, in particular to an AlGaN sun-blind ultraviolet enhanced avalanche photodetector and a preparation method thereof. Background technique [0002] In the electromagnetic spectrum, radiation with a wavelength in the range of 200nm to 400nm is called ultraviolet radiation. Sunlight is the strongest source of ultraviolet radiation. However, due to the absorption and scattering of the ozone layer and other atmospheric gases in the atmosphere, ultraviolet radiation with a wavelength less than 280nm Radiation can hardly reach the ground, so the ultraviolet light with a wavelength of 200nm to 280nm is called the solar blind zone. The ultraviolet signal in the sun-blind area has the advantages of small background interference, easy detection of target signals, and not easy to generate false alarms, etc., and has a wide range of applications in the fields of science and military. [0003...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/0304H01L31/107H01L31/18
CPCH01L31/02161H01L31/03048H01L31/1075H01L31/1848Y02E10/544Y02P70/50
Inventor 陈敦军董可秀张荣郑有炓
Owner NANJING UNIV
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