Photomask, manufacturing method of semiconductor device and semiconductor device

Abstract

The invention discloses a photomask, a manufacturing method of a semiconductor device and a semiconductor device. The photomask comprises a first region comprising a graphical region and a first barrier region which are alternately arranged, and a second region comprising a pseudo-graphical region and second barrier regions arranged on both sides of the pseudo-graphical region, wherein the second region is connected with the first region through the second barrier regions and the graphical regions. The photomask is adopted to expose and develop a photoresist layer; the pseudo-graphical region is arranged in the second region, so that the width of the part, which corresponds to the second region, in the photoresist layer is reduced, and the inclination of the side face of the photoresist layer is reduced when the photoresist layer is subjected to hard braking; therefore, the performance of the formed semiconductor device is further improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor integrated circuits, and in particular, to a photomask, a method for manufacturing a semiconductor device, and a semiconductor device. Background technique [0002] Photolithography is one of the most common processes in the fabrication of semiconductor devices. The so-called photolithography refers to the process in which the light source passes the photomask to copy the circuit pattern to the photoresist layer on the semiconductor substrate. Errors in the photolithography process can distort the circuit pattern in the photoresist layer, thereby affecting the performance of the formed semiconductor device. Therefore, the photolithography process is one of the key factors affecting the performance of semiconductor devices. [0003] The photolithography process mainly includes the following steps: First, coat a layer of photoresist layer on the semiconductor substrate 30', wherein...

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Problems solved by technology

Since the degree of shrinkage of each first photoresist pattern 41' is significantly greater than the degree of shrinkage of the second photoresist pattern 43', the slope of the side of the first photoresist pattern 41' is significantly greater than that of the second photoresist pattern 43. ', so that the side surfaces of the first photoresist pattern 41' cannot effectively block subsequent processes (such as ion implantation or etching), thereby affecting the performance of the formed semiconductor device (such as causing well leakage current, etc.), Even lead to the failure of semiconductor devices

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