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Unpackaged LED flashing light, its driver chip and manufacturing method

A technology for driving a chip and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problem of increasing leakage current of the driving chip, and achieve the effect of solving the increase of leakage current.

Active Publication Date: 2017-11-14
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects in the prior art, the present invention provides an unpackaged LED flashing light driver chip, a manufacturing method of an unpackaged LED flashing light driving chip and an unpackaged LED flashing light, which can not only not affect the appearance and brightness of the terminal product, but also Can effectively solve the problem of increased leakage current of the driver chip caused by light

Method used

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  • Unpackaged LED flashing light, its driver chip and manufacturing method
  • Unpackaged LED flashing light, its driver chip and manufacturing method
  • Unpackaged LED flashing light, its driver chip and manufacturing method

Examples

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Effect test

no. 1 example

[0034] image 3 It shows a schematic flow chart of the manufacturing method of the driving chip of the unpackaged LED flashlight provided by the first embodiment of the present invention, as shown in figure 1 As shown, the manufacturing method of the driver chip of the unpackaged LED flashlight of this embodiment is as follows.

[0035] 301. Provide a substrate on which a P-type well, an N-type metal oxide semiconductor NMOS source and drain, a P-type metal oxide semiconductor PMOS source and drain, lead holes, and metal leads are sequentially formed.

[0036] It can be understood that the method of sequentially forming a P-type well, NMOS source and drain, PMOS source and drain, lead holes, and metal leads in this step is the same as figure 1 The corresponding steps in the shown prior art are the same, and the details thereof will not be repeated here.

[0037] 302. Form a protective layer including a light-shielding metal layer on the substrate.

[0038] Preferably, the m...

no. 2 example

[0057] Figure 4 It shows a schematic flow diagram of the manufacturing method of the driving chip of the unpackaged LED flash lamp provided by the second embodiment of the present invention, as shown in Figure 4 As shown, the manufacturing method of the driver chip of the unpackaged LED flashlight of this embodiment is as follows.

[0058] 401. Provide a substrate on which a P-type well, an NMOS source and drain, a PMOS source and drain, a lead hole, and a metal lead are sequentially formed.

[0059] It can be understood that the method of sequentially forming a P-type well, NMOS source and drain, PMOS source and drain, lead holes, and metal leads in this step is the same as figure 1 The corresponding steps in the shown prior art are the same, and the details thereof will not be repeated here.

[0060] 402. Form a protective film on the substrate.

[0061] 403. Form a light-shielding metal layer film on the protective film.

[0062] In specific applications, this step ca...

no. 3 example

[0074] The driver chip for an unpackaged LED flashlight provided by the third embodiment of the present invention includes: a P-type well, an NMOS source and drain, a PMOS source and drain, lead holes, metal leads and a protective layer, and the protective layer includes a light-shielding metal layer.

[0075] Preferably, the material of the light-shielding metal layer in this embodiment may be aluminum, but this embodiment does not limit it, it is only for illustration and can be selected according to actual needs.

[0076] The driver chip of the non-encapsulated LED flashing lamp of the present embodiment adds a layer of light-shielding metal layer on the protective layer of the driver chip in the prior art. Due to the reflective effect of the metal, after adding the light-shielding metal layer, both can not It affects the appearance and brightness of the terminal product, and can effectively solve the problem of increased leakage current of the driver chip caused by light. ...

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Abstract

The present invention provides an unpackaged LED flashlight driver chip, a manufacturing method of an unpackaged LED flashlight driver chip, and an unpackaged LED flashlight, wherein the method includes: providing a P-type well, an NMOS source drain, and a PMOS source. A drain, a lead hole, and a metal lead substrate; a protective layer including a light-shielding metal layer is formed on the substrate. The non-encapsulated LED flash driver chip produced by the above method can not only not affect the appearance and brightness of the terminal product, but also can effectively solve the problem of increased leakage current of the driver chip due to illumination.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing technology, in particular to an unpackaged LED flashing light driver chip, a manufacturing method of the unpackaged LED flashing light driving chip, and an unpackaged LED flashing light. Background technique [0002] At present, there is a kind of Light Emitting Diode (LED for short) flashlight products in which several LED lamps and driver chips are packaged together in transparent epoxy resin, and the driver chips of such products are not packaged with opaque resin. [0003] The manufacturing method of the driver chip of this type of product, such as figure 1 As shown, the manufacturing method of the driving chip of the unpackaged LED flashlight in the prior art includes: P-type well manufacturing; N-type metal oxide semiconductor (Negative channel MetalOxide Semiconductor, NMOS) source and drain manufacturing; P-type metal oxide semiconductor (positive channel MetalOxi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/58
Inventor 李如东谭志辉宋秀海冶晓飞
Owner FOUNDER MICROELECTRONICS INT
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