Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot light-emitting diode sub-pixel array, its manufacturing method and display device

A quantum dot light-emitting and sub-pixel technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as high technical difficulty, high commodity prices, and low product yield, and improve process yield and cost. Reduced, easy-to-prepare effects

Active Publication Date: 2017-07-18
BOE TECH GRP CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, high-resolution AMOLED products face serious problems of high technical difficulty, low product yield, and high commodity prices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot light-emitting diode sub-pixel array, its manufacturing method and display device
  • Quantum dot light-emitting diode sub-pixel array, its manufacturing method and display device
  • Quantum dot light-emitting diode sub-pixel array, its manufacturing method and display device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0061] Figures 2A-2K It is a schematic diagram illustrating each stage of the method for preparing a quantum dot light-emitting diode sub-pixel array according to the first embodiment of the present invention through cross-sectional views. In a specific example, for example, green, blue, and red three-color quantum dot light-emitting diode sub-pixel arrays can be respectively prepared on the substrate by a laser heating method.

[0062] first, Figure 2A The initial structure of this embodiment is shown. The initial structure is a base substrate 202, the material of which is well known in the art, such as glass or quartz. The base substrate 202 may be transparent or opaque. The base substrate 202 is cleaned using standard methods.

[0063] Next, if Figure 2B An optional thin film transistor (TFT) array 204 is fabricated on a base substrate 202 as shown. There is no limitation on the specific preparation method and structure of the TFT array, which may be methods and st...

no. 2 example

[0086] In the second embodiment, using a method similar to that of the first embodiment, the transfer of each thermally sensitive quantum dot material layer to the corresponding sub-pixel area is realized independently. The difference between the second embodiment and the first embodiment is that the heat-sensitive quantum dot material layer is not used on the carrying substrate, but directly uses a thermal conductivity mask to carry the heat-sensitive quantum dot material. In the following description, the parts in the second embodiment that are similar to those in the first embodiment will not be described in detail.

[0087] Figures 3A-3H It is a schematic diagram illustrating various stages of the method for preparing a quantum dot light-emitting diode sub-pixel array according to the second embodiment of the present invention through cross-sectional views.

[0088] Such as Figure 3A and 3B As shown, an optional TFT array 304 is prepared on the cleaned base substrate ...

no. 3 example

[0104] In the third embodiment, the transfer of each heat-sensitive quantum dot material layer to the corresponding sub-pixel area is realized independently by using a heating method similar to that of the first embodiment. The main difference between the third embodiment and the first embodiment is that instead of using a carrier substrate for the thermally sensitive quantum dot material layer, the thermally sensitive quantum dot material layer is directly coated on the quantum dot receiving layer. In the following description, the parts of the third embodiment that are similar to those of the first embodiment will not be described in detail.

[0105] Figures 4A-4H It is a schematic diagram illustrating various stages of a method for preparing a quantum dot light-emitting diode sub-pixel array according to a third embodiment of the present invention through cross-sectional views.

[0106] Such as Figure 4A and 4B As shown, an optional TFT array 404 is prepared on the cle...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments of the present invention relate to a method for manufacturing a quantum dot light emitting diode sub-pixel array, a quantum dot light emitting diode sub pixel array manufactured thereby, and a display device including the quantum dot light emitting diode sub pixel array. The manufacturing method of the quantum dot LED sub-pixel array according to the embodiment of the present invention includes the following steps: a quantum dot accepting layer forming step: forming a quantum dot accepting layer on the substrate; applying a heat-sensitive quantum dot material layer step: A heat-sensitive quantum dot material layer is applied on the quantum dot receiving layer, wherein the heat-sensitive quantum dot material layer contains a heat-sensitive organic ligand; and a heat-sensitive quantum dot material transfer step: making the heat-sensitive quantum dot material layer by heating The organic ligands of the thermally sensitive quantum dot material in the predetermined area react chemically to transfer the thermally sensitive quantum dot material in the predetermined area to the corresponding sub-pixel area on the quantum dot receiving layer.

Description

technical field [0001] Embodiments of the present invention generally relate to the field of display devices, and in particular, relate to a method for manufacturing a quantum dot light emitting diode sub-pixel array, a quantum dot light emitting diode sub-pixel array manufactured thereby, and a display device including the quantum dot light emitting diode sub-pixel array. Background technique [0002] Active-matrix organic light-emitting diodes (AMOLEDs) were once recognized as promising next-generation display products to replace liquid crystal displays (LCDs). However, with the improvement of consumers' consumption level, high-resolution products have become the key development direction of display products, and it is difficult for high-resolution AMOLED products to compete with LCD, because the organic layer structure of organic light-emitting display products usually adopts a mask However, the mask evaporation method has defects such as difficult alignment, low yield, a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/52H01L51/54H01L27/32H10K99/00
CPCH10K85/00H10K59/35H10K71/162H10K71/18H10K71/211H10K71/80H10K50/115H10K71/40H10K85/342H10K71/00H10K71/421H10K50/15H10K50/16H10K85/30H10K85/111H10K85/115H10K85/1135
Inventor 李延钊鲍里斯·克里斯塔尔钟杰兴王龙陈卓
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com