Uniform doping method for trace silicon element of magnesium oxide sintered body target

A uniform doping and magnesia technology, applied in electrical components, circuits, gas-filled discharge tubes, etc., can solve the problems of high-purity sintered magnesia target materials such as miscellaneous and uneven, and achieve high uniformity and short doping time Effect

Inactive Publication Date: 2016-04-20
营口镁质材料研究院有限公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of uneven doping in high-purity sintered magnesia targets, the present invention provides a method for uniform doping of trace silicon elements in sintered magnesia targets

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0010] Dissolve 10g of sodium silicate nonahydrate in 100ml of deionized water, and then set the volume to 500ml, which is the silicon source precursor solution; take 50ml of the precursor solution, 100g of magnesium oxide, and 500ml of deionized water and mix them in a planetary ball mill for 30 minutes. A 1000ppm silicon-doped magnesia slurry is formed; the slurry is then prepared into a sintered magnesia target, that is, a 1000ppm silicon-doped magnesia sintered target is obtained.

Embodiment 2

[0012] Dissolve 7.4g of tetraethyl orthosilicate in 50ml of ethanol, then dilute to 500ml with deionized water, which is the silicon source precursor solution; take 50ml of the precursor solution, 100g of magnesium oxide, and 500ml of deionized water and mix them in a planetary ball mill for 30 A 1000ppm silicon-doped magnesia slurry can be formed within minutes, and then the slurry can be prepared into a sintered magnesia target, that is, a 1000ppm silicon-doped magnesia sintered target can be obtained.

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PUM

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Abstract

The invention discloses a uniform doping method for a trace silicon element of a magnesium oxide sintered body target. According to the method, at first, a silicon source is dissolved and prepared into a precursor solution, when the adopted silicon source is sodium silicate, silicic acid, potassium silicate and other kinds of silicate capable of being dissolved in water, the silicon source is directly dissolved by deionized water, and volume setting is carried out, so that the precursor solution is formed; when the adopted silicon source is tetraethyl orthosilicate, trimethylhydroxysilane, silicon tetraacetate capable of being dissolved in organic solvent, the silicon source is dissolved in the organic solvent at first, and ethyl alcohol and water are used for carrying out volume setting, so that the precursor solution is formed. The precursor solution is mixed with a magnesium oxide raw material of a certain weight ratio in a ball mill to be prepared into slurry, so that uniform doping of the silicon element is completed. The slurry is subjected to spray granulation, compression moulding, sintering and other working procedures to be prepared into the magnesium oxide sintered body target doped with the trace silicon element. According to the method, doping time is short, uniformity is high, and the method is suitable for industrial application.

Description

technical field [0001] The invention relates to a method for uniform doping of trace elements, in particular to a method for uniform doping of trace elements of silicon in a magnesium oxide sintered body target. Background technique [0002] Magnesium oxide is one of the materials most resistant to ion impact, and has high secondary electron emission efficiency and light transmittance, so it is widely used as a dielectric protective film for plasma display panels (PDP). In the AC-PDP discharge unit, the dielectric protective film is directly in contact with the discharge gas, and it is required to have: a large ion-induced secondary electron emission coefficient, anti-ion bombardment, and transparency to visible light. The successful application of high-purity magnesium oxide sintered body target in color AC plasma display greatly improves its service life and display effect. However, reducing the ignition voltage of the PDP screen is an eternal subject of the PDP industry....

Claims

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Application Information

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IPC IPC(8): C04B35/04C04B35/626H01J11/40
CPCC04B35/04C04B35/6261C04B35/62625C04B2235/3427H01J11/40
Inventor 曾卫军
Owner 营口镁质材料研究院有限公司
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