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Slew rate enhanced operational amplifier suitable for restraining electromagnetic interference

A technology of operational amplifier and slew rate enhancement, which is applied to DC-coupled DC amplifiers, differential amplifiers, improved amplifiers to reduce noise effects, etc., can solve the problems of electromagnetic interference and performance parameter drift of high-gain operational amplifiers, and achieve enhanced Slew rate, the effect of improving the suppression ability

Inactive Publication Date: 2016-03-30
TIANJIN UNIV
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Problems solved by technology

Because low-voltage, low-power, high-gain operational amplifiers are more susceptible to electromagnetic interference, resulting in drift of performance parameters

Method used

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  • Slew rate enhanced operational amplifier suitable for restraining electromagnetic interference

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Embodiment Construction

[0014] The technical solution of the present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0015] Specific description of the embodiment of the present invention: select the gate input terminals Vp of the second to third PMOS transistors M1a, M1b and the gate input terminals Vn of the fourth to fifth PMOS transistors M2a, M2b, and input the differential mode signals Vin+ and Vin respectively -, through the amplification effect of the Recyclingfoldedcascode amplification stage, and then through the electromagnetic interference suppression stage to filter the stray signal, and at the same time the current mirror enhances the slew rate, and then outputs the signal through the high voltage swing output terminal Vout. Finally, while maintaining the stability of the amplifier, the purpose of improving the EMI suppression capability and enhancing the slew rate of the amplifier under the same power consumpt...

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Abstract

The invention discloses a slew rate enhanced operational amplifier suitable for restraining electromagnetic interference. The operational amplifier consists of seventeen MOS (Metal Oxide Semiconductor) transistors, namely, first to eleventh PMOS (P-channel Metal Oxide Semiconductor) transistors M0, M1a, M1b, M2a, M2b, M5, M6, M7, M8, M9 and M10 and first to sixth NMOS (N-channel Metal Oxide Semiconductor) transistors M3a, M3b, M4a, M4b, M11 and M12, wherein differential-mode signals Vin+ and Vin- are input through gate electrode input ends Vp of the second to third PMOS transistors M1a and M1b, and gate electrode input ends Vn of the fourth to fifth PMOS transistors M2a and M2b respectively; spurious signals are filtered through amplification of a Recycling folded cascode amplification stage and an electromagnetic interference restraining stage; meanwhile, a slew rate is increased; and a signal is output through a high-gain output end Vout. Through adoption of the operational amplifier in a low-voltage and low-power-consumption mixed signal circuit, an electromagnetic interference restraining ability specific to signals can be enhanced while the slew rate is increased.

Description

technical field [0001] The invention relates to an operational amplifier and electromagnetic interference suppression technology, in particular to a low power consumption slew rate enhanced single-stage operational amplifier. Background technique [0002] With the development of modern CMOS mixed-signal integrated circuits, analog circuit modules and digital circuit modules are integrated on the same substrate, and the two circuit modules are prone to signal coupling effects and crosstalk. However, analog circuits are very sensitive to coupling effects, because this will deteriorate the signal of the internal circuit of the analog circuit, resulting in errors and misjudgments. In order to minimize the coupling effect, it is very important to study the suppression circuit of electromagnetic interference (EMI). Operational amplifiers are widely used in analog circuit modules, so it is meaningful to study the EMI suppression circuit of amplifiers. Because low-voltage, low-pow...

Claims

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Application Information

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IPC IPC(8): H03F1/26H03F3/45
Inventor 肖夏张庚宇
Owner TIANJIN UNIV
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