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Preparation method of NbN thin film, SQUID device and preparation method of SQUID device

A niobium nitride thin film and niobium nitride technology, applied in the manufacture/processing of devices including a node of different materials, superconducting devices, superconductor devices, etc., can solve the practical application of low-temperature SQUID devices and SQUID devices Low working temperature and other problems, to achieve the effect of reducing refrigeration costs and increasing working temperature

Active Publication Date: 2016-03-30
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned shortcoming of the prior art, the purpose of the present invention is to provide a kind of preparation method of niobium nitride thin film, SQUID device and preparation method thereof, be used to solve the low working temperature of SQUID device in the prior art, thus in economical and technical aspects limit the practical application of low-temperature SQUID devices

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[0048] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0049] see Figure 2 to Figure 14 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed ar...

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Abstract

The invention provides a preparation method of a NbN thin film, a SQUID device and a preparation method of the SQUID device. The preparation method of the NbN thin film comprises the following steps: performing epitaxial growth of a three-layer film structure comprising a first NbN material layer, a first insulating material layer, a second NbN material layer in sequence on a substrate in a way of magnetron sputtering; etching to form a bottom electrode pattern; forming a Josephson junction; depositing a second insulating material layer; preparing a bypass resistor; depositing a third NbN material layer and forming a top electrode. The SQUID device comprises a substrate, a superconducting ring prepared on the substrate and a Josephson junction prepared on the substrate and embedded in the loop of the superconducting ring, wherein the Josephson junction comprises a bottom electrode, an insulating material layer and a counter electrode. The invention provides a preparation method of a NbN thin film; further, a NbN / AlN / NbN Josephson junction based SQUID device can be prepared on the basis of the preparation method, so that the SQUID device can work at a temperature higher than 4.2K; therefore, the refrigerating cost of a superconducting AQUID device is lowered.

Description

technical field [0001] The invention relates to the field of superconducting quantum interference devices, in particular to a method for preparing a niobium nitride thin film, a SQUID device and a method for preparing the same. Background technique [0002] Inserting two Josephson structures into a superconducting ring forms a superconducting quantum interference device (SuperconductingQuantumInterferenceDevice, SQUID), such as figure 1 As shown, it is a superconducting quantum device based on the Josephson effect and the principle of magnetic flux quantization. The superconducting critical current of the SQUID device changes periodically with the magnetic flux induced by the SQUID device. When the bias current of the SQUID device is greater than the maximum critical current of the device, a voltage is generated at both ends of the SQUID device, and the voltage value also varies with the SQUID device. The magnetic flux induced by the SQUID device presents periodic changes. ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L39/12H01L39/22H01L39/24H10N60/85H10N60/01
CPCH10N60/805H10N60/85H10N60/0156H10N60/0241H10N60/12H10N60/0912
Inventor 刘全胜王会武张栖瑜应利良王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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