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Controllable array nano wire solar battery and preparation method thereof

A technology of solar cells and nanowires, which is applied in the field of solar cells, can solve the problems of difficult realization of controllable array nanowire solar cells and poor controllability, and achieve the effects of low cost, expanded effective absorption range, and simple process

Active Publication Date: 2016-02-03
PEKING UNIV
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Problems solved by technology

However, the controllability of the former is too poor, and the latter will introduce other defects, making it difficult to realize controllable array nanowire solar cells.

Method used

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  • Controllable array nano wire solar battery and preparation method thereof
  • Controllable array nano wire solar battery and preparation method thereof
  • Controllable array nano wire solar battery and preparation method thereof

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preparation example Construction

[0046] The preparation method of the controllable array nanowire solar cell of this embodiment comprises the following steps:

[0047] 1) Select the crystal plane with the fastest growth rate in the semiconductor material as the substrate:

[0048] The growth rate of wurtzite GaN along the [0001] direction is much faster than that along the and For the growth rate in the direction, the (0001) plane GaN is selected as the substrate, so that [0001] is the surface normal direction of the substrate, which is conducive to the growth of nanowires along the surface normal direction of the substrate.

[0049] 2) Pre-grow an N-type doped layer on the substrate:

[0050] Si is used for N-type doping at 1300°C, and the doping concentration is 5×10 on the (0001) plane GaN substrate 1 18 cm -3 The N-type doped layer 2 has a thickness of 1 μm, such as figure 1 shown. Atomic force microscope AFM test shows that the surface of N-type GaN has atomic level flatness.

[0051] 3) Accordi...

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Abstract

The invention discloses a controllable array nano wire solar battery and a preparation method thereof. The solar battery comprises a substrate, an N-type doping layer, an N-type nano wire, a multi-quantum well, a P-type doping layer, an insulation material, a P-type electrode and an N-type electrode. The N-type nano wire and the multi-quantum well form a nucleus-casing structure; through designing the arrangement and the diameter of a graphical substrate, the period and the diameter of an array nano wire can be accurately regulated and controlled, and the demands of different solar batteries are met; the surface area / volume ratio of the N-type nano wire is quite large, and the absorption area of the solar battery is effectively improved; the array nano wire has a photonic crystal effect and can expand its effective absorption scope of solar spectra; the diameter of the N-type nano wire is smaller than the wavelength of sunshine, the concentrating effect is obvious, the dimension of the N-type nano wire is adjusted, and the absorption efficiency of the solar battery is improved; and the process is simple, the cost is low, and batch production can be realized.

Description

technical field [0001] The invention relates to solar cell technology, in particular to a controllable array nanowire solar cell and a preparation method thereof. Background technique [0002] The semiconductor nanowire structure has high crystal quality and good optical and electrical properties, so it has great potential in the fields of nano-devices, such as photoelectric conversion devices, high-efficiency light-emitting devices, field-effect devices, sensor devices, single-electron storage devices, and single-photon devices. Great application value. In recent years, energy issues have become a key issue affecting the sustainable development of countries around the world. The development of renewable energy technologies represented by solar cells has become increasingly important. The further improvement of the photoelectric conversion efficiency of cells has always been one of the goals pursued by people. Controllable array nanowires have photonic crystal effect and sm...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/18
CPCH01L31/035236H01L31/18H01L31/1848Y02E10/544Y02P70/50
Inventor 王新强王平荣新盛博文唐宁郑显通马定宇荀坤沈波
Owner PEKING UNIV
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