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Continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser

A technology of frequency spacing and coupling cavity, which is applied in the field of microwave photonics, can solve the problems of long device size, low yield, and difficult to accurately control the width of deep etched grooves, so as to reduce complexity and cost, lower manufacturing cost, and improve The effect of mode selectivity

Active Publication Date: 2016-01-27
ZHEJIANG UNIV
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Problems solved by technology

However, due to the limitation of the precision of the manufacturing process, it is difficult to accurately control the width of the deep etching groove, and the size of the device is relatively long, so the yield of the production is not high.

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  • Continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser
  • Continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser
  • Continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser

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Embodiment Construction

[0044] The present invention will be described in detail below according to the drawings and embodiments.

[0045] The present invention uses a semiconductor laser based on coupled cavity coupling, and utilizes multi-segment FP cavity coupling to generate dual wavelengths. Compared with the first two methods in the background technology, the microwave spectrum line width produced by it will have a certain broadening, but because the two wavelengths share A gain cavity has the same external environment and a strong phase correlation between two wavelengths, which can achieve better microwave spectrum characteristics.

[0046] Embodiments of the present invention and working principle thereof are as follows:

[0047] In specific implementation, such as image 3 As shown, the present invention includes two equal-length active Fabry-Perot resonators and two unequal-length passive Fabry-Perot resonators, and the two arms of the V-shaped cavity pass through a quarter The wavelengt...

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Abstract

The invention discloses a continuously adjustable frequency interval V-shaped coupled cavity double-wavelength semiconductor laser. One end of a first active resonator cavity and one end of a second active resonator cavity are coupled in the shape of V to form a multi-mode coupled region. A cavity surface reflecting surface is arranged on the end face of the multi-mode coupled region. The other end of the first active resonator cavity and a first passive filter are connected in series through a deep etching groove to form an arm of the laser. The other end of the second active resonator cavity and a second passive filter are connected in series through a deep etching groove to form the other arm of the laser. Shallow etching grooves are arranged on the first active resonator cavity and the second active resonator cavity. The laser provided by the invention has the advantages of compact structure, simple production process, low cost and the like, and does not need an external reference light source.

Description

technical field [0001] The invention relates to the field of microwave photonics, in particular to a single-chip integrated and continuously adjustable frequency interval V-shaped coupling cavity double-wavelength semiconductor laser for microwave generation. Background technique [0002] Signals in the microwave frequency band have very important applications in many fields such as wireless communication, radar detection, and microwave sensing. Especially in recent years, with the rapid increase of users' requirements for wireless data traffic and the rapid development of "mobile Internet", high-speed broadband wireless communication technology has become the development direction of next-generation wireless communication technology and a new growth point of market demand. Microwave photon technology, especially the generation of microwave light source, as the core technology of "mobile Internet", is becoming a research hotspot in various research groups and academic instit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10H01S5/02
Inventor 何建军胡志朋
Owner ZHEJIANG UNIV
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