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QLED and preparation method thereof

A hole transport layer and quantum dot light-emitting technology, applied in the field of QLED and its preparation, can solve the problems of carrier imbalance and low performance of QLED, and achieve the effects of improving device performance, preventing quenching, and easily controlling the method.

Active Publication Date: 2016-01-27
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a QLED, which aims to solve the problem of existing QLEDs, especially short-wavelength QLEDs, which cause carrier (electron and hole) imbalance due to the difficulty of hole injection, and ultimately lead to the problem of low QLED performance.

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  • QLED and preparation method thereof
  • QLED and preparation method thereof

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preparation example Construction

[0035] Correspondingly, an embodiment of the present invention provides a method for preparing a QLED, comprising the following steps:

[0036] S01. Provide a cathode;

[0037] S02. Depositing a quantum dot luminescent layer on the cathode;

[0038] S03. Under a vacuum environment, sequentially deposit a hole transport layer and an anode on the quantum dot light-emitting layer.

[0039] The selection of materials for each layer in the embodiment of the present invention and its preferred type and thickness are as described above, and will not be repeated here to save space.

[0040] Specifically, in the above step S01, the cathode can be realized by depositing on the substrate, and the deposition method is not limited, and can be realized by sputtering.

[0041] Further, the cathode can also be cleaned and / or surface modified by oxygen plasma treatment.

[0042] In the above step S02, the method of depositing the quantum dot light-emitting layer on the cathode is not limite...

Embodiment 1

[0049] A QLED comprising a cathode 1, an electron transport layer 3, a quantum dot light-emitting layer 4, a hole transport layer 5, a hole injection layer 7 and an anode 8 which are stacked in sequence, such as figure 1 As shown, the hole transport layer 5 is made of a deep blue light host material. Wherein, the electron transport layer 3 is selected from ZnO nanoparticle film with a thickness of 20-200nm; the hole transport layer 5 is selected from UGH-2 with a thickness of about 5-40nm; the hole injection layer 7 is selected from MoO 3 , with a thickness of 2-20nm; the anode 8 is an Ag or Au high work function metal anode.

[0050] Molecular structural formula of UGH-2:

[0051] The molecular structural formula of the UGH-2 is as shown above. On the one hand, the LUMO energy level of the UGH-2 is about 2.8eV, and the HOMO energy level is about 7.1eV, so the hole transport layer 5 and the quantum energy can be effectively reduced. The hole injection barrier between the d...

Embodiment 2

[0057] A QLED comprising a cathode 1, an electron transport layer 3, a quantum dot luminescent layer 4, a hole transport layer 5, a hole transport / injection mixed layer 6, a hole injection layer 7 and an anode 8 stacked in sequence, such as figure 2 As shown, wherein, the hole transport layer 5 is made of deep blue light host material.

[0058] Wherein, the electron transport layer 3 is a ZnO nanoparticle film with a thickness of 20-200nm; the hole transport layer 5 is UGH-2 with a thickness of about 5-40nm; the hole transport / injection mixed layer 6 is UGH -2 with MoO 3 The blend material, wherein, the mass ratio of the UGH-2 to the MoO3 is (100:1)-(100:20), and the thickness of the hole transport / injection mixed layer 6 is 5-10nm; the The hole injection layer 7 is selected from MoO 3 , with a thickness of 2-20nm; the anode 8 is an Ag or Au high work function metal anode. Wherein, the electron transport layer 3 is selected from ZnO nanoparticle film with a thickness of 20...

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Abstract

The invention is suitable for the field of quantum dot light emitting diodes (QLED) and provides a QLED and a preparation method thereof. The QLED includes a cathode, a quantum dot luminescent layer, a cavity transmission layer and an anode. The cathode, the quantum dot luminescent layer, the cavity transmission layer and the anode are overlapped in turn. The cavity transmission layer is made of dark blue light main body materials. The preparation method of the QLED includes the following steps of: providing one cathode; depositing the quantum dot luminescent layer on the cathode; and in a vacuum environment, depositing the cavity transmission layer and the anode in turn on the quantum dot luminescent layer.

Description

technical field [0001] The invention belongs to the field of quantum dot light-emitting diodes, in particular to a QLED and a preparation method thereof. Background technique [0002] Light-emitting diodes (LEDs) have received more and more attention due to their low energy consumption, low heat production, and long life in the contemporary era with strong awareness of environmental protection and energy conservation, and have gradually replaced traditional lighting technologies and become a new generation of lighting sources. . As the core component of LED, luminescent material has a crucial influence on the performance of LED. Phosphor luminescent materials, as the first generation of LED luminescent materials, have been widely used in LED lighting and display, but they have disadvantages such as large light attenuation, poor particle uniformity, and short service life, which seriously restrict the development of phosphor LEDs. Organic Light Emitting Diode (OLED) is the ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K85/60H10K50/15H10K71/00
Inventor 陈亚文付东闫晓林
Owner TCL CORPORATION
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