Production equipment of anti-potentially-induced-degradation solar cell

Abstract

The present invention discloses production equipment of an anti-PID (potentially-induced-degradation) solar cell. The production equipment comprises a feeding zone, an etching tank, a first water tank, an alkali tank, a second water tank, an HF acid tank, a third water tank, a drying tank and a blanking zone. An ozone machine is arranged between the drying tank and the blanking zone which are orderly arranged and connected. The ozone machine comprises a steam cleaning box, a drying box, an ozone oxidation box, an annealing box, a conveying belt and an exhaust pipe. The steam cleaning box, the drying box, the ozone oxidation box and the annealing box are orderly arranged and connected and are connected to the exhaust pipe. The conveying belt is arranged under the ozone machine. According to the production equipment, the yield of the anti-PID cell is improved, the anti-PID performance of the cell is improved, in addition, the conversion efficiency of the cell is improved by the excellent passivation effect of a dense silicon dioxide layer.

Description

technical field [0001] The invention relates to the technical field of solar cells, and more particularly relates to a production equipment for anti-potential-induced attenuation solar cells. Background technique [0002] Potential-induced degradation (PID) refers to the phenomenon that the power of solar cell modules decreases under the action of high temperature, high humidity and high voltage. Solar cell modules will experience different degrees of potential-induced attenuation phenomenon in about five years under the power generation state, which has become a major problem in the field of photovoltaic power generation. [0003] At present, the anti-PID technology on the battery side is mainly concentrated on the silicon dioxide / silicon nitride stacking technology. The anti-PID performance of this composite film has been highly recognized by the industry. In the preparation of the silicon dioxide / silicon nitride stack, the silicon dioxide layer is the key point, which di...

AI Technical Summary

Problems solved by technology

There are two methods for the preparation of the silicon dioxide layer: one is to use PECVD technology to ionize N2O / SiH4 to deposit a silicon dioxide layer, but the silicon dioxide layer of this technology is poor in density and seriously damages the graphite boat and furnace tube , will also reduce the conversion efficiency of the battery; one is to add an ozone oxidation device to the PSG removal equipment to oxidize the surface of the silicon wafer to form a silicon dioxide layer. This technology is low in cost and simple in process, and can also improve the conversion of the battery Efficiency is the top priority of current anti-PID technology

[0004] Ozone anti-PID technology also has some disadvantages, such as a high proportion of bad battery appearance, and the compactness of the silicon dioxide layer needs to be improved, etc., which also restricts the wider promotion of this technology. Therefore, it is urgent to improve the ozone anti-PID technology

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