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A Gaas-based room temperature infrared luminescent material based on bismuth element and its preparation method

A technology of infrared luminescence and elements, which is applied in the direction of luminescent materials, chemical instruments and methods, lasers, etc., can solve the problem that the luminous wavelength of semiconductor materials is difficult to expand the communication window and other problems

Active Publication Date: 2018-05-18
CHAOJING TECH BEIJING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention proposes a GaAs-based room temperature infrared luminescent material based on bismuth and its preparation method, which is used to solve the problem that the luminous wavelength of semiconductor materials in the prior art is difficult to extend to the communication window

Method used

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  • A Gaas-based room temperature infrared luminescent material based on bismuth element and its preparation method
  • A Gaas-based room temperature infrared luminescent material based on bismuth element and its preparation method
  • A Gaas-based room temperature infrared luminescent material based on bismuth element and its preparation method

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Embodiment 1

[0074] see figure 1 , the present invention provides a GaAs-based room-temperature infrared luminescent material based on bismuth, and the GaAs-based room-temperature infrared luminescent material based on bismuth includes at least one element made of In x Ga 1-x As material layer 30 and GaAs 1-y Bi y material layer 40 formed of In x Ga 1-x As / GaAs 1-y Bi y / In x Ga 1-x As equal width symmetrical double quantum well material structure; where, 0<x≤0.3, 0<y≤0.15.

[0075]As an example, the GaAs-based room-temperature infrared luminescent material based on bismuth element further includes a substrate 10, a buffer layer 20, and a GaAs cap layer 50; the buffer layer 20 is located on the surface of the substrate 10, and is located on the quantum The bottom of the well material structure; the GaAs cap layer 50 is located at the top of the quantum well material structure; that is, the GaAs-based room temperature infrared luminescent material based on bismuth element includes ...

Embodiment 2

[0105] see Figure 4 , the present invention provides a GaAs-based room-temperature infrared luminescent material based on bismuth, the GaAs-based room-temperature infrared luminescent material based on bismuth includes at least one element made of In x Ga 1-x As material layer and GaAs 1-y Bi y material layer formed by In x Ga 1-x As / GaAs 1-y Bi y Asymmetric quantum well material structure; where, 0<x≤0.3, 0<y≤0.15.

[0106] As an example, the GaAs-based room-temperature infrared luminescent material based on bismuth element further includes a substrate 10, a buffer layer 20, and a GaAs cap layer 50; the buffer layer 20 is located on the surface of the substrate 10, and is located on the quantum The bottom of the well material structure; the GaAs cap layer 50 is located at the top of the quantum well material structure; that is, the GaAs-based room temperature infrared luminescent material based on bismuth element includes the substrate 10 and the buffer layer from bot...

Embodiment 3

[0132] see Figure 6 , the present invention also provides a GaAs-based room-temperature infrared luminescent material based on bismuth, the GaAs-based room-temperature infrared luminescent material based on bismuth comprising at least one In x Ga 1-x As material layer 30 and GaAs 1-y Bi y material layer 40 formed GaAs 1-y Bi y / In x Ga 1-x As / GaAs 1-y Bi y Unequal width double quantum well material structure; wherein, 0<x≤0.3, 0<y≤0.15.

[0133] As an example, the GaAs-based room-temperature infrared luminescent material based on bismuth element further includes a substrate 10, a buffer layer 20, and a GaAs cap layer 50; the buffer layer 20 is located on the surface of the substrate 10, and is located on the quantum The bottom of the well material structure; the GaAs cap layer 50 is located at the top of the quantum well material structure; that is, the GaAs-based room temperature infrared luminescent material based on bismuth element includes the substrate 10 and th...

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Abstract

The present invention provides a GaAs-based room-temperature infrared luminescent material based on bismuth and a preparation method thereof, including an InxGa1-xAs material layer and a GaAs1-yBiy material layer, wherein 0

Description

technical field [0001] The invention belongs to the field of semiconductor photoelectric material preparation, in particular to a bismuth-based GaAs-based room temperature infrared luminescent material and a preparation method thereof. Background technique [0002] With the rapid development of the Internet and the explosive growth of information, the optical fiber communication system as the main transmission network must develop towards larger transmission capacity and longer transmission distance. Signal dispersion, attenuation and nonlinear effects are the main factors affecting the performance of optical fiber transmission system. In the optical fiber communication system, the 1.3μm light has the smallest dispersion in the process of information transmission. The G.652 fiber specified by the International Telecommunication Union is called the standard single-mode fiber, which refers to the single-mode fiber with zero dispersion wavelength in the 1.3μm window. Therefore...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/343C09K11/74C09K11/62
Inventor 王庶民
Owner CHAOJING TECH BEIJING CO LTD
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