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Method for forming field cut-off layer in semiconductor device

A field-stop layer, semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of inability to use, field-stop layer limitations, high implantation dose, etc., to avoid the influence of the front structure of the device. Effect

Active Publication Date: 2015-12-30
中国东方电气集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the limitations of implantation equipment and process technology, compared with the commonly used donor element ions in semiconductor processes, such as phosphorus ions and arsenic ions, proton implantation cannot use a higher implantation dose, which makes the field stop layer formed by proton implantation possible. limited in some application areas

Method used

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  • Method for forming field cut-off layer in semiconductor device
  • Method for forming field cut-off layer in semiconductor device
  • Method for forming field cut-off layer in semiconductor device

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Embodiment 1

[0041] A method of forming a field stop layer in a semiconductor device, comprising the steps of:

[0042] A) A semiconductor device is selected, including a semiconductor substrate 110 of the first conductivity type.

[0043] B) Proton implantation is performed from the back surface of the semiconductor substrate 110 of the first conductivity type of the semiconductor device described in A), and the implantation process is completed.

[0044] C) After the implantation process in step B), the semiconductor device is annealed in an annealing device, so as to form a first semiconductor region 111 a with a concentration higher than that of the semiconductor substrate 110 of the first conductivity type.

[0045] The depth of the first semiconductor region 111a formed in C) from the back surface of the semiconductor device is d 1 .

[0046]The thickness of the first semiconductor region 111a formed in C) is h 1 .

[0047] D) Perform ion implantation from the back surface of the...

Embodiment 2

[0055] A method of forming a field stop layer in a semiconductor device, comprising the steps of:

[0056] A) A semiconductor device is selected, including a semiconductor substrate 110 of the first conductivity type. The first conductivity type in A) is n-type.

[0057] B) Proton implantation is performed from the back surface of the semiconductor substrate 110 of the first conductivity type of the semiconductor device described in A), and the implantation process is completed. The proton injection dose described in B) is 1e 12 cm -2 ~1e 16 cm -2 , the injection energy is 300KeV~6MeV.

[0058] C) After the implantation process in step B), the semiconductor device is annealed in an annealing device, so as to form a first semiconductor region 111 a with a concentration higher than that of the semiconductor substrate 110 of the first conductivity type. The depth of the first semiconductor region 111a formed in C) from the back surface of the semiconductor device is d 1 . ...

Embodiment 3

[0063] A method of forming a field stop layer in a semiconductor device, comprising the steps of:

[0064] A) A semiconductor device is selected, including a semiconductor substrate 110 of the first conductivity type. The first conductivity type in A) is n-type.

[0065] B) Proton implantation is performed from the back surface of the semiconductor substrate 110 of the first conductivity type of the semiconductor device described in A), and the implantation process is completed. The proton injection dose described in B) is 1e 14 cm -2 , the injection energy is 2MeV.

[0066] C) After the implantation process in step B), the semiconductor device is annealed in an annealing device, so as to form a first semiconductor region 111 a with a concentration higher than that of the semiconductor substrate 110 of the first conductivity type. The depth of the first semiconductor region 111a formed in C) from the back surface of the semiconductor device is d 1 . The thickness of the ...

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Abstract

The invention relates to the field of a semiconductor device, and specifically relates to a method for forming a field cut-off layer in a semiconductor device. The method comprises the following steps: A, selecting one semiconductor device including a first conductive-type semiconductor substrate; B, performing proton injection from the back surface of the first conductive-type semiconductor substrate; C, performing annealing processing on the semiconductor device in an annealing apparatus so as to form a first semiconductor area with a higher concentration than the first conductive-type semiconductor substrate; D, performing ion implantation from the back surface of the first conductive-type semiconductor substrate; and E, performing annealing processing on the semiconductor device in the annealing apparatus so as to form a second semiconductor area with a higher concentration than the first conductive-type semiconductor substrate. According to the invention, the concentration requirement for the field cut-off layer relative to the semiconductor substrate can be met, the depth requirement for the field cut-off layer relative to the back surface of the semiconductor device can also be met, and at the same time, the influence exerted on the front-surface structure of the device in the formation process of the field cut-off layer is also avoided.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a method for forming a field stop layer in a semiconductor device. Background technique [0002] In semiconductor devices such as diodes and insulated gate bipolar transistors (IGBTs), in order to improve the withstand voltage and switching performance of the device while reducing loss, it is necessary to dope the semiconductor substrate at a deeper position from the back of the device to form a current-carrying The subconcentration is higher than the buffer layer of the substrate. According to Poisson's equation, the electric field attenuation gradient is proportional to the charge concentration, so a buffer layer with a higher concentration can make the electric field rapidly decay and stop at this layer, preventing the depletion region from expanding to the back surface of the device and causing punchthrough, so the buffer layer Also known as the "field stop (FieldStop) l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L29/06
CPCH01L21/265H01L29/0615
Inventor 王思亮胡强张世勇
Owner 中国东方电气集团有限公司
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