Gas inflowing and cooling device for MOCVD equipment

Abstract

The invention discloses a gas inflowing and cooling device for MOCVD equipment. The gas inflowing and cooling device is provided with spray heads located at the top of the interior of a reaction chamber, gas inflowing guide pipes for organic metal gas are arranged in gas inlets for isolation gas in a penetrating mode, the isolation gas can form curtain-shaped gas flow and surround the periphery of the organic metal gas, and therefore the organic metal gas which is sprayed just now and hydride gas can be isolated and prevented from untimely reacting to generate parasitic particles. In addition, the parasitic particles can be prevented from being formed nearby the gas inlets formed in the bottom face of the gas inflowing device, therefore, the conveyed organic metal gas and the hydride gas can be evenly distributed on a base and all substrates, the thin film growth quality is guaranteed, and the thin film growth rate is improved.

Description

technical field [0001] The invention relates to semiconductor manufacturing equipment, in particular to an air intake and cooling device for MOCVD equipment. Background technique [0002] At present, in the metal-organic chemical vapor deposition method (hereinafter referred to as MOCVD), the gas of II or III metal-organic compounds and the hydride gas containing IV or V elements are introduced into the reaction chamber of the MOCVD equipment, so that the mixture of the two When the gas is sent to the surface of the substrate placed on the bottom base in the reaction chamber, a thermal decomposition reaction can occur on the surface of the substrate, thereby epitaxially growing to form a compound single crystal film. [0003] Such as figure 1 , figure 2 As shown, in a gas inlet device provided by US2010 / 0143588A1, a gas distribution plate located at the top of the reaction chamber is provided, which includes a plurality of elongated tubular gas distribution elements exten...

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Problems solved by technology

[0004] like figure 1 , figure 2 , image 3 As shown, the above-mentioned air intake device has the following disadvantages: at the edge of the air intake device, different gas mixing states and gas flow rates are present at different positions on the circumference, which is easy to form a vortex; The distribution area of ​​the reaction source gas is alternately distributed strip type, non-centrosymmetric, which makes the distribution of the two reaction source gases uneven on different substrates or on different positions of the same substrate, especially between the central area and the edge area. Inhomogeneous film formed by the final deposition, affecting product quality

[0006] However, taking the above-mentioned first embodiment as an example, the air intake device is not only complex in structure, but also has a flat bottom surface, and there are many areas on this plane where no gas flows through, and it is easy to form eddy currents to disturb parasitic particles, causing parasitic particles Clings to the underside of the air intake and is difficult to remove

Moreover, the outlet on the lower surface of the third gas diffusion chamber is far away from the output positions of the two reaction source gases, so it is difficult for the purge gas delivered through the outlet to separate the two reaction source gases or remove the attached parasitic particles

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