Establishing method for improved HBT small-signal equivalent circuit model

Abstract

The invention relates to an establishing method for an improved HBT (Heterojunction Bipolar Transistor) small-signal equivalent circuit model. The establishing method comprises the following steps: 1) extracting an inter-polar metal lead overlap capacitance parameter; 2) extracting an intrinsic parameter: peeling off a bonding pad stray parameter and a component resistance parameter from a complete HBT diffusion parameter, performing add and subtract operation on the acquired resistance parameter Zint, taking a real part and an imaginary part, and respectively acquiring a base internal resistance Rbi and a base diffusion capacitance Cbi, and (2) peeling off the Rbi and Cbi from the resistance parameter Zint, converting, utilizing the acquired admittance parameter Yqint to extract a resistance parameter, a capacitance parameter, a mutual conductance parameter and a delay time; 3) utilizing the four parameters: the inter-polar metal lead overlap capacitance parameter, the intrinsic parameter, the bonding pad stray parameter and the component resistance parameter, to acquire the HBT small-signal equivalent circuit model. According to the establishing method provided by the invention, the metal lead overlap capacitance and the base diffusion capacitance Cbi are introduced, so that the simulation precision of the HBT small-signal equivalent circuit is increased.

Description

Technical field [0001] The invention is the field of microelectronics technology, which further involves the establishment method of HBT small signal equivalent circuit models in the semiconductor device technology field, which is used to design the design of ultra -high -speed integrated circuits. Background technique [0002] HBT refers to the bipolar -type transistor tube of phosphorurate heterogeneous knot, which is widely used in microwave millimeter -wave integrated circuits such as ultra -high -speed digital integrated circuits, ultra -high -speed digital mixed integrated circuits.With the continuous development of HBT applications, the establishment of a large signal equivalent circuit with accurate signal and fast and accurate parameter extraction method is of great significance for HBT's circuit design.Part of the focus and hotspot gradually became the research in the field of microelectronics technology. [0003] At present, the parameter extraction method of HBT's sma...

AI Technical Summary

Problems solved by technology

The deficiencies of this patent are: firstly, in the planarization process of the HBT, the influence of the overlapping capacitance between the metal leads of each pole is ignored; secondly, the influence of the AC emitter current concentration effect of the HBT transistor is ignored; finally, the base - The introduction of the collector external junction capacitance reduces the extraction accuracy of the intrinsic part parameters, thereby reducing the simulation accuracy of the HBT small-signal equivalent circuit, which needs to be improved

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