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Amplification module formed by integration of transistor and film bulk acoustic resonators

A thin-film bulk acoustic wave and amplifier module technology, which is applied in the fields of semiconductors, microelectronics and communications, to achieve the effects of small space, small size, and reduced harmonic power loss

Active Publication Date: 2015-12-09
DYNAX SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The integration of the transistor and the thin-film bulk acoustic resonator can completely overcome the problems existing in the prior art when the resonator composed of lumped inductance and capacitance is integrated with the transistor

Method used

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  • Amplification module formed by integration of transistor and film bulk acoustic resonators
  • Amplification module formed by integration of transistor and film bulk acoustic resonators
  • Amplification module formed by integration of transistor and film bulk acoustic resonators

Examples

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Effect test

Embodiment 1

[0060] Figure 4A It is a cross-sectional view of an amplification module integrated with a transistor and a thin-film bulk acoustic resonator provided in Embodiment 1 of the present invention. Such as Figure 4A As shown, the amplifying module integrates a transistor 401 and a group of thin film bulk acoustic resonators 402 into one structure. Wherein, the thin film bulk acoustic resonator includes a thin film bulk acoustic resonator structure.

[0061] The transistors may be gallium nitride high electron mobility transistors, gallium arsenide high electron mobility transistors, metal oxide field effect transistors, lateral metal oxide field effect transistors, or junction transistors. The input terminal, the output terminal and the ground terminal of the transistor are respectively the gate, the drain and the source of the transistor or the base, the collector and the emitter of the transistor. The following describes an example where the transistor is a gallium nitride h...

Embodiment 2

[0070] Figure 5A It is a cross-sectional view of an amplification module integrated with a transistor and a thin-film bulk acoustic resonator provided in Embodiment 2 of the present invention. Such as Figure 5A As shown, the difference from the amplification module provided in Embodiment 1 of the present invention is that the back gold layer 403 and the part of the substrate 404 extending beyond the buffer layer of this amplification module are located outside the source electrode 407 . The thin film bulk acoustic resonator 402 is located on the extended portion of the substrate 404 . The upper electrode 414 of the film bulk acoustic resonator 402 is electrically connected to the gate 412 of the transistor 401 through the conductive metal 420. In addition, in order to realize the electrical insulation between the conductive metal 420 and the source 407, nitrogen is arranged between the conductive metal 420 and the source 407. SiO layer 421. In order to reduce the influenc...

Embodiment 3

[0075] Image 6 It is a cross-sectional view of an amplification module integrated with a transistor and a thin-film bulk acoustic resonator provided in Embodiment 3 of the present invention. Such as Image 6 As shown, different from the amplifying module provided in Embodiment 2 of the present invention, this amplifying module does not include the second isolation layer and the third through hole, and the lower electrode 415 of the thin film bulk acoustic resonator 402 is directly connected to the source 407 of the transistor 401. contact to achieve electrical connection. This structural design makes the bottom electrode 415 of the film bulk acoustic resonator 402 and the source 407 of the transistor 401 share the first through hole 413, so that both are electrically connected to the back gold layer 403, and the third through hole is not needed.

[0076] Compared with the amplifying module provided in Embodiment 2 of the present invention, the amplifying module provided in ...

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Abstract

The invention discloses an amplification module formed by integration of a transistor and film bulk acoustic resonators. The amplification module comprises the transistor and at least one group of the film bulk acoustic resonators. The transistor and the at least one group of the film bulk acoustic resonators are integrated in one structure. The transistor comprises an input end, an output end and a grounding end. One group of the film bulk acoustic resonators comprise at least one film bulk acoustic resonator structure. One film bulk acoustic resonator structure comprises a first electrode, a second electrode, and a dielectric film layer arranged between the first electrode and the second electrode. The at least one group of the film bulk acoustic resonators are arranged at the output end and / or the input end of the transistor and used for harmonic wave tuning. According to the amplification module formed by integration of the transistor and the film bulk acoustic resonators, harmonic wave tuning can be performed on the transistor so that efficiency and linearity of the amplification module can be enhanced.

Description

technical field [0001] The invention relates to the technical fields of semiconductor, microelectronics and communication, in particular to an amplification module integrated with a transistor and a thin-film bulk acoustic wave resonator. Background technique [0002] With the development of communication technology, communication systems are gradually developing in the direction of high efficiency, high frequency, high power, broadband and miniaturization. As the core component of the communication system, the amplifier's efficiency and linearity directly affect the performance of the communication system. Especially in today's increasingly scarce resources, how to further improve the efficiency of the communication system has attracted much attention. The linearity of the communication system directly determines the communication quality, and the linearity is also one of the core indicators of the communication system. [0003] Transistors are nonlinear devices, which wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/17H03F3/45
CPCH03H9/0542
Inventor 杨天应张乃千张永胜
Owner DYNAX SEMICON
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