Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for optical loss generated by indium tin oxide/metal electrode to organic laser gain layer

A technology of laser gain and metal electrodes, applied to the structure of the active region, etc., can solve the problems of high current density in the active layer, complex manufacturing process, poor conductivity, etc., to achieve improved interface flatness, simple process, and improved performance Effect

Inactive Publication Date: 2015-11-25
SHENZHEN SISENSING TECH CO LTD
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the cost of these methods is too high, the manufacturing process is more complicated, and sometimes heat treatment of the interface layer is required, and these interface materials have poor conductivity, making it difficult to achieve high current density in the active layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for optical loss generated by indium tin oxide/metal electrode to organic laser gain layer
  • Method for optical loss generated by indium tin oxide/metal electrode to organic laser gain layer
  • Method for optical loss generated by indium tin oxide/metal electrode to organic laser gain layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Combining the commercial material PFO as the gain medium, the influence of different substrates on the amplified spontaneous emission behavior of the gain medium is studied. The results are shown in figure 1 and figure 2 . The comparison shows that the organic laser gain has the lowest threshold on the quartz substrate, while on the indium tin oxide electrode due to the rough surface and relatively high refractive index, resulting in higher light scattering loss and mode leakage loss, corresponding to a higher ASE threshold, Moreover, the corresponding amplified spontaneous emission spectrum is also severely deformed, indicating that the ITO electrode has a serious negative impact on the excitation behavior of the gain medium, including threshold and spectrum.

Embodiment 2

[0030] With cellulose acetate (CA), PEDOT:PSS, PFN + Br - 、PPFN + Br - Three kinds of water-soluble organic interface materials were used to prepare the organic interface layer with the same thickness, indium tin oxide electrode was used, and PFO was used as the organic laser gain medium layer. Figure 4 The experimental results show that PFN + Br - and CA for PFO than PEDOT:PSS and PPFN + Br - more effective.

Embodiment 3

[0032] use PFN + Br - As the material for preparing the organic interface layer, organic interface layers with different thicknesses are prepared between the indium tin oxide electrode and the organic laser gain medium layer. The light with a wavelength of 390nm is used as the pumping light, the device is pumped from one side of the organic laser gain medium layer, and the outgoing light is received at the side end of the organic laser gain medium layer. When the thickness is 15-30nm, the amplification threshold of lasing or spontaneous emission drops significantly.

[0033] By changing the thickness of the organic interface layer, the spontaneous emission amplification threshold is reduced. Due to the introduction of the organic interface layer, the electrode and the organic laser gain medium layer are separated, the optical loss caused by direct contact is avoided, the optical loss of the device is reduced, the laser or spontaneous emission threshold is reduced, and the ef...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a method for optical loss generated by an indium tin oxide / metal electrode to an organic laser gain layer. According to the method, an organic interface layer is introduced between the indium tin oxide / metal electrode and an organic laser gain dielectric layer and is prepared through a solution, and a solvent used by the organic interface layer is water or alcohol and is not dissolved in the organic laser gain dielectric layer. According to the method, the effective refractive index of a waveguide structure can be adjusted by adjusting the material thickness of the organic interface layer and selecting organic interface materials having different refractive indexes so as to achieve adjustment and control on the output wavelength of a device. The method used by the invention is cheap in cost, the process is simple and fast, and the method can be implemented at a normal temperature, is suitable for various printing technologies and also can be used for device fabricatiion of a flexible substrate.

Description

technical field [0001] The invention belongs to the technical field of organic lasers, and in particular relates to a method for reducing the optical loss caused by an indium tin oxide / metal electrode to an organic laser gain layer. Background technique [0002] The birth of the first ruby ​​laser in 1960 triggered a revolution in the field of science and technology, which greatly promoted the development of productivity and social progress. Laser spectroscopy has given us an unprecedented understanding of the physical and chemical world around us. The rapid development of organic semiconductor lasers has benefited from the continuous maturity of the theory and technology in the fields of organic thin film transistors and organic light emitting diodes. The rapid development of organic semiconductor lasers has enriched the types of lasers, which have potentially important application prospects in the field of information optoelectronics. Electrically pumped organic semico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/36
Inventor 夏瑞东易建鹏夏斌徐巍栋池浪方月婷黄津津
Owner SHENZHEN SISENSING TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products