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Flash type electrical storage material and preparation method of electrical storage device

A technology for electric storage and devices, which is applied in the field of preparation of Flash-type electric storage materials and electric storage devices, can solve problems such as chip size reduction, and achieve the effects of reduced error rate, low cost, and high solubility

Inactive Publication Date: 2015-11-25
HEILONGJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the size of the chip cannot be reduced infinitely, and high integration will inevitably face more technical difficulties

Method used

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  • Flash type electrical storage material and preparation method of electrical storage device
  • Flash type electrical storage material and preparation method of electrical storage device
  • Flash type electrical storage material and preparation method of electrical storage device

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specific Embodiment approach

[0032] The technical solution of the present invention is not limited to the following specific embodiments, but also includes any combination of the specific embodiments.

specific Embodiment approach 1

[0033] Specific Embodiment 1: In this embodiment, a method for preparing a memory device based on a fluorene-triphenylamine conjugated polymer is realized in the following steps:

[0034] Step 1, ultrasonically clean the ITO glass in reagent a, and store it in absolute ethanol for later use;

[0035] Step 2, dissolving the fluorene-triphenylamine conjugated polymer or the mixture of the conjugated polymer and the organic small molecule electron acceptor in chlorobenzene, stirring and ultrasonically dispersing (the concentration is 3-15 mg / mL);

[0036] Step 3. Spin-coat the polymer solution evenly on the ITO glass through a homogenizer, and dry in vacuum to remove the solvent; the thickness of the polymer film is 20-100nm;

[0037] Step 4: Cover the surface of the polymer with a copper sheet having holes with uniform size distribution, and plate the top electrode Al on the polymer by evaporation. The thickness of the top electrode Al is 200-400 nanometers; the area of ​​the t...

specific Embodiment approach 2

[0038] Embodiment 2: This embodiment is different from Embodiment 1 in that the organic solvent a in step 1 is deionized water, absolute ethanol, acetone, absolute ethanol, and deionized water. Other steps and parameters are the same as those in Embodiment 1.

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Abstract

The invention belongs to the field of electrical storage device materials and technologies, and particularly relates to a Flash type electrical storage material and a preparation method of an electrical storage device. The preparation process of the Flash type electrical storage device comprises the steps of preparing a fluorene-triphenylamine conjugated polymer or a mixture of the fluorene-triphenylamine conjugated polymer and a fullerene derivative PCBM into a chlorobenzene solution with the concentration being 5-15mg / mL, then spin-coating the chlorobenzene solution on a piece of clean ITO glass, carrying out vacuum drying, and removing the solvent; and finally plating a top electrode Al on the polymer by using a vacuum evaporation method. An organic electrical storage device prepared by using the method provided by the invention has the characteristics of simple technological operation and low cost. In addition, the electrical storage material in the invention has an electron donor group (triphenylamine) and an electron acceptor (PCBM), so that the prepared storage device has the characteristics of low operating voltage and high switching current ratio, and has good application prospects in the field of information storage.

Description

technical field [0001] The invention belongs to the field of new materials and technologies of electric storage, and in particular relates to a preparation method of a Flash type electric storage material and an electric storage device thereof. Background technique [0002] With the rapid development of information technology and the rapid update of electronic digital products, people's demand for various electric storage devices is increasing day by day. The technology of using traditional inorganic semiconductor materials to prepare electrical storage devices has been very mature, making it fully applied in various information fields. The continuous progress of the information industry has made high integration and small size an inevitable trend in the development of electrical storage devices. However, the size of the chip cannot be reduced infinitely, and high integration will inevitably face more technical difficulties. Therefore, the development of new electrical sto...

Claims

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Application Information

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IPC IPC(8): H01L51/30H01L51/40H01L27/12C08G61/12
CPCH10K85/633H10K10/00
Inventor 孙治尧李明霞王淑红蔡庄赵曦虢德超常青白续铎马东阁
Owner HEILONGJIANG UNIV
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