Measuring device for Raman scattering spectrum and Raman scattering spectrometer

Abstract

The invention provides a measuring device for a Raman scattered spectrum and a Raman scattering spectrometer. A path of laser emitted from a pulse laser excites a sample and a Raman scattered light signal is generated; a Raman scattered light path transmits the Raman scattered light signal to a grating monochromator; the grating monochromator transmits the Raman scattered light signal to a signal light detector; the pulse laser emits another path of laser to a reference light detector, and the reference light detector outputs a timing beginning signal of the Raman scattering event according to the laser; the signal light detector carries out precise counting measurement of photons comprised by each light pulse of the Raman scattered light signal in a preset time period with the timing beginning signal as a start, and the light detector is a silicon photoelectric multiplier; a spectrum generation device generates a Raman scattered spectrum according to the photon number of all the light pulses of the Raman scattered light signal. The time resolution is raised, the photon counting efficiency is raised and the signal to noise ratio and the detection speed are raised.

Description

technical field [0001] The invention relates to the technical field of material detection, in particular to a Raman scattering spectrum measuring device and a Raman scattering spectrometer. Background technique [0002] In recent years, a silicon photomultiplier (also called silicon photomultiplier tube, SiPM or MPPC) derived from the research of nuclear physics semiconductor detectors has attracted extensive attention [see D. Renker, "Geiger-mode avalanche photodiodes, history, properties and problems”, Nuclear Instruments and Methods in Physics Research A 567(2006) 48–56; Elena V. Popova et al., “Silicon photomultiplier (deformation) and silicon photomultiplier unit”, application number: 200580019248.1 ]. SiPM consists of hundreds to thousands of avalanche photodiode (APD) units with a diameter of tens to tens of microns integrated on the same single crystal silicon wafer. All APD units are output in parallel and share one load. Each APD unit works above the breakdown vo...

AI Technical Summary

Problems solved by technology

This technology based on gated ICCD detector is simpler than Kerr optical switch technology, and its time resolution is generally at the nanosecond level, but the inherent excess noise of ICCD limits its maximum signal-to-noise ratio, its quantum efficiency is low, and its spectral response range It is narrow, the time resolution is not high enough, and the rejection effect on short-lived fluorescent signals is limited. It is easily damaged by accidental exposure to strong light during work, which is not conducive to use in the field environment

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