Silicon-Based Low Leakage Current Dual Cantilever Beam Movable Gate Frequency Doubler

Abstract

The silicon-based low-leakage current dual cantilever beam movable gate MOSFET frequency multiplier of the present invention consists of a silicon substrate, an N-type enhanced MOSFET, and an external low-pass filter, a voltage-controlled oscillator, a divider, and a high-frequency choke circle composition. The gate of the MOSFET is two cantilever beams suspended on the gate oxide layer. The pull-down voltage is designed as the threshold voltage of the MOSFET, controlled by DC bias, and used as the input of the reference signal and the feedback signal. When the movable gates of the two cantilever beams are in the floating state, the MOSFET is turned off, and the gates are not in contact with the gate oxide layer, which can reduce gate leakage current and power consumption. When the movable gates of the two cantilever beams are pulled down and contact the gate oxide layer, the MOSFET is turned on, the reference signal and the feedback signal are transmitted to the MOSFET for multiplication, and the multiplication of the reference signal frequency is realized through an external circuit. After the movable gate of a single cantilever beam is pulled down, the amplification of a single signal can be realized, and the circuit has multiple functions. The invention reduces power consumption, has smaller volume and realizes multiple functions.

Description

technical field [0001] The invention provides a silicon-based low-leakage current dual cantilever beam movable gate MOSFET (metal oxide semiconductor field effect transistor) frequency multiplier, which belongs to the technical field of micro-electromechanical systems. Background technique [0002] The frequency multiplier can use a reference signal as a standard and use the basic frequency operation technology to obtain a frequency signal that is N times the frequency of the reference signal. At present, frequency multipliers have been widely used in radio receivers and transmitters, and frequency multipliers are widely used as the oscillation frequency source of receivers and transmitters. The traditional frequency multiplier has disadvantages such as complex structure and large size. More importantly, the existence of gate leakage current of the circuit MOSFET device increases the power consumption of the circuit. [0003] MEMS has the advantages of small size, low power...

AI Technical Summary

Problems solved by technology

The traditional frequency multiplier has the disadvantages of complex structure and large size, and more importantly, the existence of gate leakage current of the circuit MOSFET device increases the power consumption of the circuit

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