Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flexible gas sensor based on three-dimensional net structured sensitive film and preparation method of flexible gas sensor

A gas sensor and network structure technology, which is applied in the fields of sensitive electronics and flexible electronics, can solve the problems of not taking advantage of the ductility of flexible substrates on three-dimensional network structure films, complex preparation processes, etc., and achieve rapid and high-sensitivity detection and preparation methods Simple, low-cost effect

Inactive Publication Date: 2015-08-26
TSINGHUA UNIV
View PDF6 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the report, the silver nanowires need to be etched after the polyaniline network structure is formed, the preparation process is complicated, and the prepared gas sensor element does not take advantage of the ductility of the flexible substrate for the three-dimensional network structure film.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flexible gas sensor based on three-dimensional net structured sensitive film and preparation method of flexible gas sensor

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0033] The preparation method of the above-mentioned flexible gas sensor based on the three-dimensional network structure sensitive film proposed by the present invention comprises the following steps:

[0034] 1) Expose and develop the interdigitated electrode pattern on the flexible substrate layer 1 by photolithography; spin-coat photoresist on the front, 3000-5000rpm, 30-60s; pre-bake at 100-120°C, 1-3min; expose for 3-5s; develop; Post-bake at 100-120°C for 10-15 minutes, and set aside; the exposed part is the interdigitated electrode;

[0035] 2) Electron beam evaporation is used to sequentially evaporate chromium (Cr) / gold (Au) or titanium (Ti) / gold (Au) electrodes on the silicon oxide insulating layer, and chromium (Cr) / gold (Au) or titanium (Ti) ) / gold thicknesses are 10-30nm and 50-100nm respectively;

[0036] 3) Put the sample obtained above into an acetone solution, ultrasonically peel off the photoresist; wash with alcohol and deionized water in sequence, and blo...

Embodiment 1

[0040] Embodiment 1 is a typical example of the content of the present invention.

[0041] The flexible gas sensor element based on the three-dimensional network structure sensitive film of the present embodiment, such as figure 1 As shown, it includes a flexible substrate 1, an interdigital electrode layer 2, and a three-dimensional network structure sensitive thin film layer 3. Among them, the thickness of the flexible substrate 1 used is 100-200um, and the light transmittance is ≥70-80%. The material used in the flexible substrate is polyethylene terephthalate plastic (PET); the interdigital electrode layer 2 is made of chromium (Cr ) / gold (Au), the thickness is 10nm / 50nm; or titanium (Ti) / gold (Au), the thickness is 10nm / 50nm; , sheets, etc.) of metal oxide semiconductor materials are deposited by spraying to form a three-dimensional network structure sensitive thin film layer.

[0042] The technological process of the present embodiment is:

[0043] 1) For flexible PET...

Embodiment 2

[0049] Embodiment 2 is a typical example of the content of the present invention.

[0050] The flexible gas sensor element based on the three-dimensional network structure sensitive film of the present embodiment, such as figure 1 As shown, it includes a flexible substrate 1, an interdigital electrode layer 2, and a three-dimensional network structure sensitive thin film layer 3. Among them, the thickness of the flexible substrate 1 used is 100-200um, the light transmittance is ≥70-80%, and the material used for the substrate is polyimide (PI); the interdigital electrode layer 2 is made of chromium (Cr) / gold ( Au), the thickness is successively 30nm / 100nm; or titanium (Ti) / gold (Au), the thickness is successively 30nm / 100nm; three-dimensional network structure sensitive thin film layer 3 is to adopt carbon nanotube, adopt spraying method to deposit and form three-dimensional network structure sensitive film layer.

[0051] The technological process of the present embodiment ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a flexible gas sensing device based on a three-dimensional net sensitive film and a preparation method of the flexible gas sensing device, and belongs to the fields of sensing electronics and flexible electronics. The sensing device comprises a flexible substrate layer, an interdigital electrode layer and a three-dimensional net structured sensitive film layer which are sequentially stacked according to the preparation order. The preparation method mainly comprises steps as follows: preparing a flexible interdigital electrode device, preparing a film material required by the sensing device, and preparing a three-dimensional net structured sensitive film device with a gas injection film forming technology. The flexible gas sensing device based on the three-dimensional net sensitive film and the preparation method of the flexible gas sensing device have the advantages as follows: by means of the extensibility of the flexible substrate on the three-dimensional net structured sensitive film, the response performance of the sensitive film on gas is further improved, meanwhile, the process is simple, the cost is low, and the prepared sensing device can be used in the field of gas detection.

Description

technical field [0001] The invention belongs to the technical fields of sensitive electronics and flexible electronics, and in particular relates to a flexible gas sensor device based on a three-dimensional network sensitive film and a preparation method thereof. Background technique [0002] With its unique flexibility, ductility, high-efficiency and low-cost manufacturing process, flexible electronic technology has broad application prospects in the fields of information, energy, medical and national defense. In recent years, with the rise of smart wearable devices and the development of Internet of Things technology, the demand for flexible electronic components is increasing day by day. Compared with silicon-based or ceramic-based gas sensing devices, flexible gas sensors can achieve smaller size and lower power consumption while having high performance, and are also suitable for wearable devices, electronic tags or mobile platforms. Real-time quality monitoring of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
Inventor 谢丹李娴戴睿轩徐建龙滕长久李志鑫杨埔
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com