Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Miniature solid mode locked laser

A mode-locked laser and solid-state technology, used in lasers, laser components, phonon exciters, etc.

Inactive Publication Date: 2015-08-12
FUJIAN CASTECH CRYSTALS
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And although fiber lasers are far simpler and more practical than solid-state lasers, so far there is no mode-locked fiber laser that can adopt an all-fiber structure without manual adjustment and self-starting

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Miniature solid mode locked laser
  • Miniature solid mode locked laser
  • Miniature solid mode locked laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0012] Embodiment one: the overall device such as figure 1 As shown, the light emitted by the pump source 101 passes through the focusing lens 102, and then enters the laser crystal 104 through the reflector 103. After the saturable absorber enters the pair of right-angle prisms 106 and 107, it reflects back and forth between the two right-angle prisms to increase the cavity length. Laser output. The right-angled side surfaces of the right-angle prism pair are also plated with a chirped film layer, which can play a role of dispersion compensation for the components in the cavity.

Embodiment approach 2

[0013] Embodiment two: the overall device such as figure 2 As shown, the light emitted by the pump source 201 passes through the focusing lens 202, and then enters the laser crystal 204 through the reflector 203. After being reflected by 204, the light enters the pair of right-angle prisms 205 and 206, and is reflected back and forth between the two right-angle prisms. 207 is a semiconductor saturable absorption mirror, coated with a high-reflection film for output laser as a front cavity mirror, and the laser passes through the semiconductor saturable absorption mirror. The original path is returned to output from the end face of the laser crystal.

Embodiment approach 3

[0014] Embodiment three: the overall device such as image 3 As shown, compared with the second embodiment, the whole device is arranged on the same straight line, the light emitted by the pump source 301 passes through the focusing lens 302, and is focused to the laser crystal 304, and the end surface of the laser crystal is coated with a pump light high reflection film And the output laser anti-reflection film is used as the rear cavity mirror of the resonator, enters the pair of right-angle prisms 305 and 306, and reflects back and forth between the two right-angle prisms, 307 is a semiconductor saturable absorption mirror, and the high-reflection film coated with the output laser is used as the front cavity mirror. After the laser passes through the semiconductor saturable absorber mirror, it returns to the original path and is output from the reflector 303 .

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the short pulse laser field; a rectangular prism combination is employed in a chamber; a multi-reflection method between rectangular prism pairs can enlarge a physics chamber length of a laser chamber; a full reflection surface of the rectangular prism is plated with a chirp mirror reflection film so as to generate chamber inner element dispersion compensation effect; in addition, a semiconductor saturable absorber serves as a front chamber mirror or a rear chamber mirror of a standing-wave chamber, thus realizing the full solid miniature mode locked laser, and realizing burst pulse or ultrashort pulse output with a high peak power a narrow pulse width; in addition, each optical element in the laser chamber can form an integrated body through optical cement or deepening optical cement.

Description

technical field [0001] This patent is an invention patent in the field of short-pulse lasers, especially a miniaturized solid-state mode-locked laser. Background technique [0002] Ultrashort pulses have picosecond and femtosecond pulse widths, high pulse repetition frequency, wide spectrum and high peak power. They are used in physics, biology, OCT, laser spectroscopy, optical communication and laser fine processing, nonlinear Frequency conversion and many other fields have a wide range of applications. [0003] For the laser, if no mode selection device is added in the laser resonator, the output spectral line of the laser is composed of many discrete spectra determined by the horizontal and vertical. The laser transition linewidth limits the number of oscillation modes with sufficiently large gain to a certain number. Only those wavelengths at which the gain of the laser medium exceeds the loss of the resonator forms laser radiation. In a free-running laser, the longit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S3/098
Inventor 校金涛江彬王城强欧阳靖吴季陈伟
Owner FUJIAN CASTECH CRYSTALS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com