Epitaxial structure capable of effectively reducing Droop effect of LED
An epitaxial structure and effect technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of complex causes of the Droop effect, the inability to significantly improve the luminous efficiency of light-emitting diodes, and the lack of solutions, etc., to achieve simple structure and low potential Barrier difference, the effect of improving injection efficiency
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[0021] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:
[0022] An epitaxial structure that can effectively reduce the Droop effect of LEDs, including a substrate stacked sequentially from bottom to top, an undoped gallium nitride layer, an N-type gallium nitride layer, a multi-quantum well layer, an electron blocking layer and a P type GaN layer, refer to figure 2 , the multiple quantum well layer is composed of multiple barrier layers Al x Ga (1-x) N and well layer In y Ga (1-y) N is stacked alternately, where x is the composition of Al in the barrier layer, and y is the composition of In in the well layer.
[0023] The non-doped gallium nitride layer grows undoped GaN with relatively good crystal lattice quality according to the sequence structure of low-temperature nucleation, high-temperature annealing, rough layer and recovery layer.
[0024] Further as a preferred embodiment, the electron b...
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