Light-emitting diode chip and preparation method thereof

Abstract

The invention discloses a light-emitting diode chip and a preparation method thereof, and belongs to the field of light-emitting diodes. The method includes the steps: providing a substrate; sequentially growing an N-type semiconductor layer, an active layer and a P-type semiconductor layer on the substrate; forming steps on the N-type semiconductor layer, the active layer and the P-type semiconductor layer; growing a transparent conductive layer on an upper horizontal end face and forming a sink hole in the middle of the transparent conductive layer; arranging N electrodes on a lower horizontal end face and arranging a P electrode in the sink hole; growing a metal catalyst layer on a light-emitting diode chip with an N electrode and the P electrode, covering an area of the surface of the light-emitting diode chip except for central areas of top surfaces and step surfaces of the N electrode and the P electrode with the metal catalyst layer; forming a fluoro graphene protecting layer on the metal catalyst layer. Each step comprises the upper horizontal end face, the lower horizontal end face and the step surface connected with the upper horizontal end face and the lower horizontal end face.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a light-emitting diode chip and a preparation method thereof. Background technique [0002] Light-emitting diode is a kind of green lighting source, which has the characteristics of energy saving and environmental protection, high reliability, long life, fast response, vibration resistance, easy maintenance, etc. It has been widely used in flat panel display, traffic signal lights, lighting and car lights and other fields. Light-emitting diodes are a new generation of lighting sources that can replace incandescent and fluorescent lamps. [0003] In the prior art, the most widely used LED chip includes: a substrate layer, an N-type semiconductor layer stacked on the substrate in sequence, an active layer and a P-type semiconductor layer. A step is etched on the sequentially stacked N-type semiconductor layer, active layer and P-type semiconductor layer, a transparent conducti...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem of unsatisfactory waterproof and heat dissipation performance of the protective layer in the prior art, the embodiment of the present invention provides a light emitting diode chip and its preparation method

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