Photodetector and preparation method based on graphene and nanostructure perovskite material

Abstract

The invention discloses a photodetector based on graphene and nano-structure perovskite materials and a preparation method, comprising a silicon substrate covered with silicon dioxide, a graphene conductive layer is arranged on the silicon substrate, and the graphene conductive layer The middle part is distributed with a nanostructured organic lead halide perovskite material layer, and forms a heterojunction structure. An electrode layer is provided at the left and right ends of the graphene conductive layer; a passivation layer is provided on the top of the silicon substrate to passivate The graphene conductive layer, the nanostructure organic lead halide perovskite material layer and the two electrode layers are all covered; a contact hole of the electrode is formed by photolithography and etching on the passivation layer above the two electrode layers , metal lead-out electrodes are respectively deposited on the two contact holes. Compared with the current silicon electronic technology platform, the technology for constructing the photodetection device of the present invention has good compatibility, and the preparation process is simple, the success rate of the device is high, and it has great potential to realize fast, broadband response and wide-spectrum photodetection.

Description

technical field [0001] The invention belongs to the field of photodetectors, in particular to a photodetector based on graphene and nanostructure perovskite materials and a preparation method. Background technique [0002] For a photodetector, the detection bandwidth and response speed of the photodetector are important parameters to measure its performance. The spectral range and detection bandwidth of conventional photodetectors based on group IV and group III-V semiconductors (such as silicon and gallium arsenide) are limited by their energy bands and carrier transit times, making it difficult to achieve ultrafast broadband absorption The photodetector is not suitable for some applications with stricter device performance requirements, such as ultra-fast broadband data transmission. On the other hand, with the increasing requirements for device integration, the device size needs to be continuously reduced, and the size of traditional devices based on Group IV and Group I...

AI Technical Summary

Problems solved by technology

The spectral range and detection bandwidth of conventional photodetectors based on group IV and III-V semiconductors (such as silicon and gallium arsenide) are limited by their energy bands and carrier transit times, making it difficult to achieve ultrafast broadband absorption The optical detector is not suitable for some applications that have stricter requirements on device performance, such as the field of ultra-fast broadband data transmission

On the other hand, as the requirements for device integration increase, the device size needs to be continuously reduced, and the traditional device size based on Group IV and III-V semiconductors is approaching its limit.

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