Semiconductor light emitting device and manufacturing method thereof

Abstract

Semiconductor light-emitting device and its preparation method, the semiconductor light-emitting device includes a substrate, a crystalline layer formed on the substrate, a gallium nitride buffer layer, an N-type gallium nitride layer, a transition layer, a multi-quantum well layer and a P-type gallium nitride layer; also includes a low-temperature gallium nitride layer, the low-temperature gallium nitride layer is formed on the N-type gallium nitride layer, and several pits are formed thereon; a stress release layer, the thickness of the stress release layer is less than 100nm and is sequentially formed at a low temperature 1 to K layers of Inx(k)Ga1-x(k)N on the gallium nitride layer are formed, wherein, the thickness dk of the k-th layer of Inx(k)Ga1-x(k)N is smaller than the k-1th layer of Inx( k-1)Ga1-x(k-1)N thickness dk-1, and x(k)>x(k-1), k=1,...,K, K≤5; P-type gallium nitride layer Cover pits. The present invention adjusts the number of layers and total thickness of InGaN in the stress release layer according to the composition of indium in the quantum well, so that the composition of indium in each layer of InGaN increases gradually from the bottom layer to the surface, and the thickness decreases gradually, so as to achieve the purpose of gradually releasing stress.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light emitting devices, and in particular relates to a Group III nitride semiconductor device and a preparation method thereof. Background technique [0002] The emergence of semiconductor light-emitting devices has brought light sources that can cover the visible spectrum and have higher luminous efficiency and solid-state stability. Semiconductor light emitting devices, such as light emitting diodes (LEDs) or laser diodes, have been widely used in many fields. Light emitting diodes or laser diodes generally comprise nitride semiconductor layers fabricated by epitaxial processes on a microelectronic substrate, which may be gallium arsenide, gallium phosphide, silicon carbide and / or sapphire, and on the substrate. Visible light-emitting diodes based on group III nitride semiconductors have been widely used in the fields of indoor and outdoor color display, backlight and lighting in recent y...

AI Technical Summary

Problems solved by technology

The Chinese invention patent application with publication number 102449737A discloses a method for growing III-nitride thin films on non-polar or semi-polar surfaces to reduce the polarization charges in quantum wells; but in this method, The quantum wells in the non-polar or semi-polar plane have very few polarized charges, the polarization field is small, and the quantum well energy band tilt is weakened. Therefore, to achieve the same wavelength, more In components need to be contained, while in The incorporation efficiency of In components on the nonpolar and semipolar surfaces is low, requiring lower growth temperatures, which will deteriorate the crystal quality of quantum wells

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