Semiconductor light-emitting device and manufacturing method thereof

Abstract

The invention discloses a semiconductor light-emitting device and a manufacturing method thereof. The semiconductor light-emitting device comprises a substrate, a crystallizing layer formed on the substrate, a gallium nitride buffering layer, an N-type gallium nitride layer, a transition layer, a multi-quantum-well layer and a P-type gallium nitride layer and further comprises a low-temperature gallium nitride layer and a stress release layer, wherein the low-temperature gallium nitride layer is formed on the N-type gallium nitride layer, a plurality of concave pits are formed in the low-temperature gallium nitride layer, the thickness of the stress release layer is smaller than 100 nm, the stress release layer is composed of 1-K layers of Inx(k)Ga1- x(K)N which are sequentially formed on the low-temperature gallium nitride layer, the thickness d<k> of the kth layer of Inx(k)Ga1- x(K)N is smaller than the thickness d<k-1> of the (k-1)th layer of Inx(k-1)Ga1- x(K-1)N, x(k) is larger than x(k-1), k is equal to 1,...,K, and K is smaller than or equal to 5; the concave pits are covered with the P-type gallium nitride layer. The number of the InGaN layers in the stress release layer and the overall thickness are adjusted according to In components of quantum wells so that the In components of the InGaN layers can be gradually increased from the bottom layer to the surface, the thickness is gradually reduced, and the purpose of gradually releasing stress is achieved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor light emitting devices, and in particular relates to a Group III nitride semiconductor device and a preparation method thereof. Background technique [0002] The emergence of semiconductor light-emitting devices has brought light sources that can cover the visible spectrum and have higher luminous efficiency and solid-state stability. Semiconductor light emitting devices, such as light emitting diodes (LEDs) or laser diodes, have been widely used in many fields. Light emitting diodes or laser diodes generally comprise nitride semiconductor layers fabricated by epitaxial processes on a microelectronic substrate, which may be gallium arsenide, gallium phosphide, silicon carbide and / or sapphire, and on the substrate. Visible light-emitting diodes based on group III nitride semiconductors have been widely used in the fields of indoor and outdoor color display, backlight and lighting in recent y...

AI Technical Summary

Problems solved by technology

The Chinese invention patent application with publication number 102449737A discloses a method for growing III-nitride thin films on non-polar or semi-polar surfaces to reduce the polarization charges in quantum wells; but in this method, The quantum wells in the non-polar or semi-polar plane have very few polarized charges, the polarization field is small, and the quantum well energy band tilt is weakened. Therefore, to achieve the same wavelength, more In components need to be contained, while in The incorporation efficiency of In components on the nonpolar and semipolar surfaces is low, requiring lower growth temperatures, which will deteriorate the crystal quality of quantum wells

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