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Non-residual-stress thin film, preparation method of non-residual-stress thin film and application of non-residual-stress thin film in nanoindentation method

A residual stress and no residual technology, which is applied in the preparation of test samples and the hardness of test materials, etc., can solve the problems that it is difficult to obtain samples without residual stress, the stress cannot be completely removed, and the coating cannot be peeled off from the substrate. Achieve the effects of improving adaptability and practicability, easy acquisition and simple operation

Inactive Publication Date: 2015-06-24
ACADEMY OF ARMORED FORCES ENG PLA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The disadvantage of the Suresh model is that the reference sample without residual stress is required in the calculation model, but it is difficult to obtain a sample without residual stress
However, these two methods have certain defects. First, the wire cutting method cannot completely peel off the coating from the substrate, and the extrusion, friction, heat generation, etc. in the machining process will cause new residual stress in the coating; The internal stress cannot be completely removed, especially the interface stress

Method used

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  • Non-residual-stress thin film, preparation method of non-residual-stress thin film and application of non-residual-stress thin film in nanoindentation method
  • Non-residual-stress thin film, preparation method of non-residual-stress thin film and application of non-residual-stress thin film in nanoindentation method
  • Non-residual-stress thin film, preparation method of non-residual-stress thin film and application of non-residual-stress thin film in nanoindentation method

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Example 1 Preparation of sample film without residual stress

[0036] Copper film preparation process

[0037] On a double-sided polished NaCl substrate, a metal copper film with a thickness of 2000 nm was prepared by a DC magnetron sputtering method. After the NaCl substrate is cleaned with high-purity acetone before preparation, it is cleaned with Ar ion for several minutes. The background vacuum of magnetron sputtering is 2*10 -4 Pa, DC bias voltage is 20V, Ar gas pressure is 0.5Pa, and sputtering rate is 20nm / min. The sputtering temperature is 100°C, and the sputtering time is 100min. The sputtering material is a Cu target with a purity of 99.9999%.

[0038] Homemade film stent

[0039] According to the size of the NaCl substrate used, the film support is designed. The film support includes a base frame and a fixing frame; the base frame is a rectangular table with a square groove in the middle, and a first circle is opened at the bottom of the groove. Shaped through ho...

Embodiment 2

[0044] Example 2 Nanoindentation test

[0045] The stress-free sample film obtained in Example 1 and the film sample without removing the substrate were subjected to a nanoindentation test to obtain the indentation data of the film sample, and then the Suresh theoretical model was used for calculation.

[0046] 1. Using the curvature method to measure the residual stress distribution of the film

[0047] GS6341 electronic thin film stress distribution tester was used to measure the stress distribution of copper film. It uses the principle of laser interference phase shift to measure the change in the radius of curvature of the substrate before and after film formation, and calculates the film stress value according to the Stoney equation.

[0048] σ ( x , y ) = Ed s 2 6 ( 1 - γ ) d f × 1 R ( x , y ) - - - ( 6 )

[0049] Among them: E, γ are the Young's modulus and Poisson's ratio of the NaCl substra...

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Abstract

The invention discloses a non-residual-stress thin film. The thin film is mainly used for calculating the intensity of residual stress in an indentation method, the thin film is a metal thin film, and the metal thin film is prepared by sputtering or depositing a thin film on a single crystal through physical vapor deposition or chemical vapor deposition, and then removing the crystal. The invention also discloses a preparation method of the non-residual-stress thin film and application of the non-residual-stress thin film in a nanoindentation method. The interfacial stress, for being combined with a substrate, of a non-residual-stress thin film sample obtained is completely removed, and in the process of a nanoindentation test, the thin film can carry out non-bottom-surface support so as to prevent a bottom surface from affecting measuring results. The non-residual-stress thin film can be used for greatly improving the adaptability and the practicability of a Suresh theoretical model in a nanoindentation testing method.

Description

Technical field [0001] The invention relates to the research field of material testing technology, in particular to a residual stress-free film and a preparation method thereof and application in a nanoindentation method. Background technique [0002] Various technological factors in the manufacturing and processing of components, uneven plastic deformation in the processing process, temperature rise and fall, and chemical or physical chemical changes will promote the generation of residual stress. The nanoindentation test method is a relatively new residual stress test method, with extremely high force resolution and displacement resolution, the measurement process causes little damage to the workpiece, the measurement is convenient and rapid, and the gauge length is small and suitable In situations where the stress gradient changes greatly. At present, the models based on the nanoindentation test method include Suresh theoretical model, Yun-Hee model, Swadener theory and Xu mo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28G01N3/42
Inventor 王海斗徐滨士金国刘金娜
Owner ACADEMY OF ARMORED FORCES ENG PLA
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