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A kind of film without residual stress and its preparation method and its application in nano-indentation method

A technology without residue and thin film, which is applied in the preparation of test samples and the hardness of test materials, etc. It can solve the problems that it is difficult to obtain samples without residual stress, the stress cannot be completely removed, and the coating cannot be peeled off from the substrate. Improve adaptability and practicality, obtain easy and simple operation effects

Inactive Publication Date: 2020-04-17
ACADEMY OF ARMORED FORCES ENG PLA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] The disadvantage of the Suresh model is that the reference sample without residual stress is required in the calculation model, but it is difficult to obtain a sample without residual stress
However, these two methods have certain defects. First, the wire cutting method cannot completely peel off the coating from the substrate, and the extrusion, friction, heat generation, etc. in the machining process will cause new residual stress in the coating; The internal stress cannot be completely removed, especially the interface stress

Method used

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  • A kind of film without residual stress and its preparation method and its application in nano-indentation method
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  • A kind of film without residual stress and its preparation method and its application in nano-indentation method

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Experimental program
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Effect test

Embodiment 1

[0033] The preparation of embodiment 1 sample film without residual stress

[0034] Preparation process of copper thin film

[0035] Copper films with a thickness of 2000nm were prepared on double-sided polished NaCl substrates by DC magnetron sputtering. The NaCl substrate was washed with high-purity acetone before preparation, and then washed with Ar ions for several minutes. The background vacuum of magnetron sputtering is 2*10-4Pa, the DC bias voltage is 20V, the Ar gas pressure is 0.5Pa, and the sputtering rate is 20nm / min. The sputtering temperature is 100° C., and the sputtering time is 100 min. The sputtering material is a Cu target with a purity of 99.9999%.

[0036] Homemade Film Holder

[0037] According to the size of the NaCl substrate used, the film support is designed, and the film support includes two parts, an underframe and a fixed frame; the underframe is a rectangular platform with a square groove in the middle, and a first circle at the bottom of the g...

Embodiment 2

[0042] Example 2 Nanoindentation test

[0043] The stress-free sample film obtained in Example 1 and the film sample without removing the substrate were subjected to nano-indentation tests to obtain the indentation data of the film sample, and then calculate using the Suresh theoretical model. 1. Using the curvature method to measure the residual stress distribution of the film

[0044] The stress distribution of the copper film was measured with a GS6341 electronic thin film stress distribution tester. It uses the principle of laser interference phase shift to measure the changes in the radius of curvature of the substrate before and after film formation, and calculates the stress value of the film according to the Stoney equation.

[0045]

[0046] Where: E, γ are the Young's modulus and Poisson's ratio of the NaCl substrate respectively; ds, df are the thicknesses of the NaCl substrate and the film, respectively, and R(x, y) is any (x, y) point on the substrate radius ...

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Abstract

The invention discloses a non-residual-stress thin film. The thin film is mainly used for calculating the intensity of residual stress in an indentation method, the thin film is a metal thin film, and the metal thin film is prepared by sputtering or depositing a thin film on a single crystal through physical vapor deposition or chemical vapor deposition, and then removing the crystal. The invention also discloses a preparation method of the non-residual-stress thin film and application of the non-residual-stress thin film in a nanoindentation method. The interfacial stress, for being combined with a substrate, of a non-residual-stress thin film sample obtained is completely removed, and in the process of a nanoindentation test, the thin film can carry out non-bottom-surface support so as to prevent a bottom surface from affecting measuring results. The non-residual-stress thin film can be used for greatly improving the adaptability and the practicability of a Suresh theoretical model in a nanoindentation testing method.

Description

technical field [0001] The invention relates to the field of material testing technology research, in particular to a non-residual stress film, its preparation method and its application in the nano-indentation method. Background technique [0002] Various process factors during the manufacturing process of components, as well as uneven plastic deformation during processing, temperature rise and fall, and chemical or physical chemical changes will promote the generation of residual stress. Nano-indentation test method is a relatively new residual stress test method, which has extremely high force resolution and displacement resolution. The measurement process causes little damage to the workpiece, and the measurement is convenient and fast. In the case of large stress gradient changes. At present, the models based on the nanoindentation test method include the Suresh theoretical model, the Yun-Hee model, the Swadener theory, and the Xu model, among which the Suresh theoreti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N1/28G01N3/42
Inventor 王海斗徐滨士金国刘金娜
Owner ACADEMY OF ARMORED FORCES ENG PLA
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