Layered phase-change memory abrasion equilibrating method and system based on random mapping

Abstract

The invention provides a layered phase-change memory abrasion equilibrating method based on random mapping. The layered phase-change memory abrasion equilibrating method based on random mapping comprises the steps that S1, the address space of a phase-change memory is divided into an RANK layer, a BANK layer and an REGION layer, and memory writing frequency counters of all the layers are arranged; S2, a memory random mapping table set of each layer is initialized, wherein if the memory writing frequency counter of a certain layer is equal to or larger than a preset writing frequency threshold valve of the layer, the memory random mapping table set of the layer is updated; S3, conversion from memory logic addresses to memory physical addresses is conducted on the RANK layer, the BANK layer and the REGION layer respectively according to memory writing operation. According to the layered phase-change memory abrasion equilibrating method, the phase-change memory abrasion equilibrating effect ca be improved, the purpose of prolonging the service life of the phase-change memory is realized, and the influence on the performance is minimized.

Description

technical field [0001] The invention relates to the field of computer technology, in particular to a layered random mapping-based phase change memory wear leveling method and system. Background technique [0002] Since phase change memory has the disadvantage of limited write times, improving the lifespan of phase change memory has become a key technology for its practical application. Wear leveling technology is one of the main methods to improve the life of phase change memory. [0003] The main problem of the existing wear leveling technology is that it either tracks the number of writes of each memory unit, resulting in a large amount of storage space and performance overhead, or there is information leakage in the memory adjustment method, which cannot resist the attack of malicious wear programs. Contents of the invention [0004] Aiming at the defects in the prior art, the present invention provides a layered random mapping-based phase change memory wear leveling m...

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Problems solved by technology

[0003] The main problem of the existing wear leveling technology is that it either tracks the write times of each memory unit, resulting in a large amount of storage space and performance overhead, or there is information leakage in the memory adjustment method, which cannot resist the attack of malicious wear programs.

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