Method of manufacturing CdS/Mg-doped CdSe sensitizer for solar cell

A technology of solar cells and sensitizers, applied in the field of solar energy, to achieve the effects of increased open circuit voltage, rapid separation, and reduced dark current

Inactive Publication Date: 2015-06-10
BEIJING INFORMATION SCI & TECH UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation of CdS / Mg doped CdSe sensitized solar cells by doping CdSe quantum dots with Mg by the SILAR method has not been reported yet.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of manufacturing CdS/Mg-doped CdSe sensitizer for solar cell
  • Method of manufacturing CdS/Mg-doped CdSe sensitizer for solar cell
  • Method of manufacturing CdS/Mg-doped CdSe sensitizer for solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] The specific steps of the preparation method of cadmium sulfide / magnesium doped cadmium selenide quantum dot sensitizer are:

[0027] 1) Equipped with Cd(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0028] 2) the M g Cl 2 ·6H 2O was added to the Cd(NO 3 ) 2 solution, in which Mg 2+ with Cd 2+ The molar concentration ratio is 1:1;

[0029] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0030] 4) The photoanode material TiO to be sensitized 2 Immerse the Cd(NO) prepared in step 1) 3 ) 2 In the solution for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with nitrogen;

[0031] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 1) 2 In the S solution for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with nitrogen;

[0032] 6) Immerse the photoanode material obta...

Embodiment 2

[0035] The specific steps of the preparation method of cadmium sulfide / magnesium doped cadmium selenide quantum dot sensitizer are:

[0036] 1) Equipped with Cd(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0037] 2) MgCl 2 ·6H 2 O was added to the Cd(NO 3 ) 2 solution, in which Mg 2+ with Cd 2+ The molar concentration ratio is 1:500;

[0038] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0039] 4) The photoanode material TiO to be sensitized 2 Immerse the Cd(NO) prepared in step 1) 3 ) 2 In the solution for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with nitrogen;

[0040] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 1) 2 In the S solution for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with nitrogen;

[0041] 6) Immerse the photoanode material obtained...

Embodiment 3

[0044] The specific steps of the preparation method of cadmium sulfide / magnesium doped cadmium selenide quantum dot sensitizer are:

[0045] 1) Equipped with Cd(NO at a concentration of 0.1M 3 ) 2 solution and Na 2 S solution, placed in a water bath at 20-50°C for 30-60min;

[0046] 2) MgCl 2 .6H 2 O was added to the Cd(NO 3 ) 2 solution, in which Mg 2+ with Cd 2+ The molar concentration ratio is 1:1000;

[0047] 3) Put the solution obtained in step 2) into a water bath at 30°C for 30 minutes;

[0048] 4) The photoanode material TiO to be sensitized 2 Immerse the Cd(NO) prepared in step 1) 3 ) 2 In the solution for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with nitrogen;

[0049] 5) Immerse the photoanode material obtained in step 4) into the Na prepared in step 1) 2 In the S solution for 5 minutes, take it out, clean it with the corresponding solvent, and dry it with nitrogen;

[0050] 6) Immerse the photoanode material obtaine...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a method of manufacturing a CdS / Mg-doped CdSe quantum dot sensitizer for a solar cell. The method comprises steps: Mg impurity atoms are doped in CdSe semiconductor quantum dots, co-sensitization is then carried out with CdS quantum dots to serve as a sensitizer, and thus a quantum dot sensitization solar cell is assembled. Through optimizing a transmission path of charges in the cell, electron holes can be separated more quickly, electrons can be more effectively injected in a TiO2 conduction band, dark current is reduced, and the short circuit current, the open circuit voltage and the photoelectric conversion efficiency of the solar cell are improved. The method is simple, easy to operate, low in cost and large-area manufacturing can be realized.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and more specifically relates to a preparation method of a cadmium sulfide / magnesium doped cadmium selenide sensitizer for solar cells. Background technique [0002] With the rapid development of the global economy, the continuous growth of population and the gradual deepening of human dependence on energy, energy crisis and environmental pollution have become the primary problems facing human beings in the 21st century. Facing the depletion of global petrochemical energy, inexhaustible solar energy is undoubtedly the first choice for human future energy development. Therefore, using solar energy as a source of new energy supply has attracted the most attention, and it has received close attention from all walks of life in terms of technological development process and future prospects. A device that directly converts light energy into electrical energy through the photoelectric effect is a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01G9/20
Inventor 邹小平何胜滕功清赵川
Owner BEIJING INFORMATION SCI & TECH UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products