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Anisotropic magnetoresistance and preparing method for improving Z-axis sensitivity of anisotropic magnetoresistance

An anisotropic magnetic and anisotropic technology, applied in the manufacture/processing of electromagnetic devices, resistors controlled by magnetic fields, etc., can solve the problem of reduced sensitivity of anisotropic magnetoresistance, decreased sensitivity of Z-axis vertical magnetoresistance, Increase the side wall reluctance 22 and other issues to achieve the effect of increasing thickness

Active Publication Date: 2015-06-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

However, since the deposition rate of the magnetic material on the surface of the substrate 10 is greater than that on the sidewall, the thickness of the sidewall magnetoresistance 22 is smaller than the thickness of the surface magnetoresistance 21. Due to the limitation of the manufacturing process, it is usually difficult to continue to make a magnetic material on the sidewall. Increase the thickness of the sidewall reluctance 22 on the wall, which leads to a decrease in the sensitivity of the vertical reluctance of the Z axis, thereby reducing the sensitivity of the entire anisotropic reluctance

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[0032] The anisotropic magnetoresistance and the preparation method for improving the Z-axis sensitivity of the anisotropic magnetoresistance of the present invention will be described in more detail below in conjunction with the schematic diagrams, which represent the preferred embodiments of the present invention, and it should be understood that those skilled in the art can modify The invention described herein, while still achieving the advantageous effects of the invention. Therefore, the following description should be construed as widely known to those skilled in the art and not as a limitation of the present invention.

[0033] In the interest of clarity, not all features of an actual embodiment are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be recognized that in the development of any actual embodiment, a number of implementation d...

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Abstract

The invention provides anisotropic magnetoresistance and a preparing method for improving the Z-axis sensitivity of the anisotropic magnetoresistance. After ordinary Z-axis vertical magnetoresistance is formed, an etching barrier layer is formed on the surface of the vertical magnetoresistance, then, compensating magnetoresistance is formed on the surface of the etching barrier layer, next, the compensating magnetoresistance positioned in the region on the substrate surface is etched, and the compensating magnetoresistance positioned on the groove side wall is reserved, so that the thickness of the compensating magnetoresistance on the groove side wall is increased under the condition of not increasing the surface magnetoresistance thickness, in addition, the etching barrier layer does not influence the magnetic field passing, and the performance of the anisotropic magnetoresistance cannot be influenced.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and more particularly, to an anisotropic magnetoresistance and a preparation method for improving the Z-axis sensitivity of the anisotropic magnetoresistance. Background technique [0002] Anisotropic Magnetoresistive (AMR) sensor is a new type of magnetoresistive effect sensor in modern industry, AMR sensor is becoming more and more important, especially in the latest smartphones, as well as parking sensors, angle sensors, automatic braking in the automotive industry System (ABS) sensors and tire pressure sensors are widely used. In addition to anisotropic magnetoresistive (AMR) sensors, the current main technical branches of magnetic sensors include Hall sensors, giant magnetic sensors (GMR), tunnel junction magnetic sensors (TMR), etc. The sensor has much higher sensitivity and is more mature in technology than GMR and TMR, so the application of anisotropic magnetoresistive...

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Application Information

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IPC IPC(8): H01L43/08H01L43/12
Inventor 时延王健鹏王俊杰
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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