Test structure used for measuring silicide resistance

A technology for testing structures and silicides, which is used in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc., to solve problems such as inability to use silicide resistance measurement, and achieve accurate measurement results.

Active Publication Date: 2015-05-27
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the traditional measurement method for measuring silicide resistance can hardly be applied to the measurement of silicide resistance in the post-silicide process

Method used

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  • Test structure used for measuring silicide resistance
  • Test structure used for measuring silicide resistance
  • Test structure used for measuring silicide resistance

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Embodiment Construction

[0025] In the following description, a lot of specific details are given in order to provide a more thorough understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present invention, some technical features known in the art are not described. In order to thoroughly understand the present invention, a detailed description will be provided in the following description to illustrate the method of the present invention. Obviously, the implementation of the present invention is not limited to the specific details familiar to those skilled in the semiconductor field. The preferred embodiments of the present invention are described in detail as follows. However, in addition to these detailed descriptions, the present invention may also have other embodiments.

[0026] It should be noted that the terms used here ...

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Abstract

The invention provides a test structure used for measuring silicide resistance. According to the test structure used for measuring the silicide resistance, provided by the invention, the test structure used for measuring the silicide resistance comprises two test structures. The resistance value of a silicide layer is indirectly measured by calculating the resistance values of the silicide layer and a strip-shaped metal test piece connected in parallel on an active region and calculating the resistance value of a strip-shaped metal test piece on an isolation structure, and the test structures used for accurately measuring the resistance of the silicide layer are provided in an under-gate process.

Description

Technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a test structure for measuring silicide resistance applied in a silicide-last process. Background technique [0002] The main device in integrated circuits (IC), especially VLSIs, is metal oxide semiconductor field effect transistors (MOS). With the increasing maturity of the semiconductor integrated circuit industry technology, the rapid development of VLSIs has higher Integrated circuits with higher performance and higher functions require greater component density, and the size, size, and space of each component, between components, or each component itself need to be further reduced. For CMOS with more advanced technology nodes, high-k and metal gate last (high-k and metal gate last) technology has been widely used in CMOS devices to avoid damage to the devices caused by high-temperature processing . [0003] After the post-high-K / metal gate process is implemented, a post-s...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L23/544
Inventor 林艺辉
Owner SEMICON MFG INT (SHANGHAI) CORP
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