Etching method and semiconductor device

Abstract

The invention provides an etching method and a semiconductor device. The etching method comprises the following steps: providing a substrate; forming a semiconductor layer stacking structure on the substrate, wherein the semiconductor layer stacking structure comprises at least two semiconductor layers arranged in parallel on the substrate and contacting each other; performing first etching on the semiconductor layer stacking structure to realize patterning; and performing second etching on the semiconductor layer stacking structure to remove a polymer formed at the interface of the semiconductor layers through the first etching. The invention further provides the semiconductor device which is formed by the etching method. The performance and output of the semiconductor device can be improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, and in particular, to an etching method and a semiconductor device. Background technique [0002] Etching is one of the most commonly used processes in the field of semiconductor technology. Typically used in conjunction with an exposure process to pattern layers. Common etchings include: wet etching and dry etching. [0003] refer to figure 1 , which is a schematic diagram of the structure of a semiconductor device formed by dry etching. The semiconductor device includes: [0004] base (not shown); [0005] The first semiconductor layer 11 and the second semiconductor layer 12 are located on the substrate; the first semiconductor layer 11 and the second semiconductor layer 12 are arranged in parallel on the substrate and are in contact to form a side-by-side stack structure of semiconductor layers, specifically, The first semiconductor layer 11 is a silicon germanium layer, ...

AI Technical Summary

Problems solved by technology

[0009] However, in the actual process, after the etching step, there are residues in the trench 10 (such as figure 2 shown in Residue 15), which can affect the performance of semiconductor devices

[0010] Even, due to the presence of said residues, more than 20% yield reduction can be caused

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