Compositions for cleaning after chemical mechanical polishing

A chemical-mechanical and composition technology, applied in the directions of detergent compositions, organic non-surface-active detergent compositions, non-surface-active detergent compositions, etc., can solve the problems of reduced semiconductor quality, reduced equipment reliability, corrosion, etc., Achieve the effect of excellent semiconductor

Active Publication Date: 2019-12-31
DONGJIN SEMICHEM CO LTD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, since unexpected substances are deposited on the surface of the liquid crystal panel after cleaning, the quality of the manufactured semiconductor is reduced, and the cleaning liquid comes into contact with the exposed copper wiring, causing wedges along the interface between metal films such as Ta and TaN and copper wiring. Form corrosion, which may reduce the reliability of the equipment, the so-called side seam phenomenon

Method used

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  • Compositions for cleaning after chemical mechanical polishing
  • Compositions for cleaning after chemical mechanical polishing

Examples

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Embodiment 1 to 3 and comparative example 1 to 7

[0040] The composition of Table 1 below was prepared by mixing tetramethylammonium hydroxide (TMAH), ascorbic acid (ASA), citric acid, monoalcohol amine (MEA) as an amine compound other than TMAH, and deionized water. Compositions for cleaning after chemical mechanical polishing. (unit weight%)

[0041] [Table 1]

[0042]

[0043]

[0044]

[0045] Cleaning power evaluation test

[0046] After depositing 5.5KA thermal oxide layer (Thermal Oxide), 250A tantalum (Ta), and 1KA copper seed layer (Cu seed) on the silicon Si wafer, electroplating (Electro-Platating, EP) on 15KA copper (Cu), thus making A wafer with exposed metal components on the surface. The fabricated wafer is put into a CMP device and subjected to chemical mechanical polishing with a polishing slurry comprising Planar solution, hydrogen peroxide and distilled water.

[0047] After chemical mechanical polishing, put the chemical mechanically polished wafer into the On track device, and spray it with ...

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Abstract

The present invention relates to a composition for post-CMP cleaning, and more specifically, to a composition for post-CMP cleaning, which is used for a process of washing a semiconductor substrate including metallic wiring and a metallic thin film, and especially a process of cleaning a semiconductor substrate whose metallic wiring is exposed after chemical mechanical polishing (CMP), regarding a semiconductor manufacturing process. According to the cleaning composition of the present invention can manufacture an excellent semiconductor since impurities attached to the surface of a semiconductor workpiece can be effectively removed, do not cause damage to metallic wiring, do not remain on the surface after washing, and accordingly do not contaminate the semiconductor workpiece. The composition for post-CMP cleaning comprises: tetraalkyl ammonium hydroxide; ascorbic acid; citric acid; and deionized water.

Description

technical field [0001] The present invention relates to a kind of composition that is used for cleaning after chemical mechanical polishing (post CMP), more particularly, relates to a kind of in semiconductor manufacturing process, is used for the cleaning process of the semiconductor substrate that comprises metal wiring and metal film, especially Composition for cleaning semiconductor substrates with exposed metal wiring after chemical mechanical polishing. Background technique [0002] With miniaturization of semiconductor devices and multilayer wiring structures, a method capable of more precisely planarizing the surface of a substrate is required at each stage of the semiconductor manufacturing process. In particular, when using multilayer metals such as copper deposited on a silicon substrate for connection to the active area of ​​a silicon wafer, the following steps are performed: Copper is deposited in lines etched in an interlayer dielectric by a damascene process, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C11D7/32C11D7/26C11D7/60
CPCC11D7/26C11D7/32C11D11/0047H01L21/306
Inventor 张斗瑛金炳郁赵泰杓尹锡壹许舜范韩莹圭
Owner DONGJIN SEMICHEM CO LTD
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