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Substrate, manufacturing method thereof and display device

A substrate and group technology, applied in the field of semiconductor display, can solve problems such as over-cutting, unsatisfactory results, affecting TFT characteristics, etc., and achieve the effect of preventing peeling

Active Publication Date: 2015-05-13
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When etching such a multi-layer structure electrode, etch residue or over-etching will often occur, which will affect the TFT characteristics.
In addition, in order to solve the peeling of the photoresist on the copper surface, many researchers have developed the photoresist coating process, post-baking and other processes, but the results are not very satisfactory

Method used

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  • Substrate, manufacturing method thereof and display device
  • Substrate, manufacturing method thereof and display device
  • Substrate, manufacturing method thereof and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] This embodiment provides a substrate with copper electrodes as gates.

[0069] Such as figure 2 As shown, the substrate described in this embodiment includes a substrate 1, and a gate 2 and a photoresist layer 4 (positive photoresist) formed on the substrate 1. Meanwhile, the gate 2 and the photoresist layer A copper diffusion / photoresist peeling improvement layer 3 is also formed between the 4.

[0070] Wherein, the gate 2 is a copper single-layer structure, and the copper diffusion / photoresist peeling improvement layer 3 is formed by depositing mercaptoundecanoic acid (MUA) on the gate as a material, and is deposited on the copper metal by a spin coating method with a thickness of 20nm mercapto undecanoic acid, molecular surface group 3-1 (in this embodiment is -SH group) contacts with copper, is used to prevent copper from diffusing; Molecular chain end group 3-2 (in this embodiment is -COOH group) is in contact with the positive photoresist to prevent the photore...

Embodiment 2

[0072] Compared with Embodiment 1, the only difference is that in this embodiment, the gate 2 (copper electrode) is a double-layer structure composed of a single layer of copper and a diffusion barrier layer, wherein the single layer of copper is the The top layer of the diffusion / photoresist stripping improvement layer contact, the diffusion prevention layer is formed of polyethyleneimine (PEI) material, specifically adopting the thermal evaporation method to deposit polyethyleneimine with a thickness of 50nm on the bottom of the single layer of copper, wherein, Molecular surface group - COO - It is in contact with copper to prevent copper diffusion; the end group of the molecular chain is -OH, which is in contact with the substrate to prevent the substrate from falling off.

Embodiment 3

[0074] Compared with Embodiment 1, the only difference is that in this embodiment, the gate 2 is a double-layer structure composed of a single layer of copper and a diffusion preventing layer.

[0075] Wherein the diffusion / photoresist peeling improvement layer located above the single layer copper is formed on the gate 2 by spin-coating method of mercaptoundecanoic acid material, with a thickness of 5nm; the molecular surface group -SH of mercaptoundecanoic acid and copper Contact to prevent metal copper from diffusing, and the molecular chain end group -COOH of mercaptoundecanoic acid contacts with positive photoresist to prevent photoresist from falling off. The diffusion barrier layer constituting a part of the gate 2 is formed of polyethyleneimine material, and polyethyleneimine is deposited on the bottom of the single-layer copper by thermal evaporation method, with a thickness of 10nm. The molecular surface group of polyethyleneimine-COO - It is in contact with copper t...

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Abstract

The invention relates to the field of semiconductor display and mainly relates to a substrate. The substrate comprises a substrate body, a copper electrode and a photoresist layer, wherein the copper electrode and the photo-etching glue layer are formed on the substrate body, and a copper diffusion / photoresist stripping improvement layer is further arranged between a copper electrode and the photoresist layer. The copper diffusion / photoresist stripping improvement layer is made from a material including main molecular chains, molecular surface groups and molecular chain end groups. The technical problems of copper diffusion and photoresist stripping occurred when copper is used for a TFT electrode by utilizing groups of different characteristics to play a difference role on the surfaces of different materials are solved, a strong bonding key is formed between the molecular surface groups and the copper, copper ions are fixed, copper diffusion is prevented, molecular chain end groups can fix a photoresist, and photoresist stripping can be prevented.

Description

technical field [0001] The invention relates to the field of semiconductor display, in particular to a substrate capable of improving copper diffusion and / or peeling off of photoresist, a manufacturing method thereof, and a display device. Background technique [0002] Copper (Cu) has a significant advantage as a TFT gate or source / drain electrode metal in the fields of high PPI and large-size display devices due to its good electrical conductivity. However, when copper is used as the gate or source / drain electrode of TFT, it is easy to diffuse into the active layer or the device layer of LCD / OLED, which affects the application of the device. In addition, the photoresist has weak adhesion on the metal copper surface, and the photoresist peeling (peel-off) phenomenon (see figure 1 ), affecting the etching of copper electrodes and TFT characteristics. [0003] At present, copper diffusion barriers are mostly used in the industry to prevent the diffusion of copper, that is, d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L29/786
Inventor 王美丽
Owner BOE TECH GRP CO LTD
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